n-Type Semiconducting Polymer Fibers

Abstract

Defect-free bicomponent fibers of poly{[N,N′-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}/poly(ethyleneoxide) P(NDI2OD-T2)/PEO are fabricated by means of electrospinning and rinsed with a selective solvent to afford pure P(NDI2OD-T2) while maintaining a fibrous morphology. The elongation strength applied on the spun jet by the high electrical field induces a preferential orientation of polymer chains. An electron mobility analogous to the best obtained with a thin film-based device is achieved in single fiber transistors, and the results are unaffected by the dielectric surface treatment

Electrospun Polymer Fibers for Electronic Applications

“…These observations, in addition to the numerous markers of strong molecular orientation observed in other polymeric semiconductors [62,67,70,77,78,160–162], indicates that electrospinning can be exploited as a general method to access active phases with controlled microstructural anisotropy, in contrast with films deposited by spin-coating in which planar morphological isotropy is generally encountered.…”

Electrospun Organic Nanofiber Electronics and Photonics

“…Other than p ‐type conjugated polymers, n ‐type semiconducting polymer fibers were recently reported by Canesi et al85 They fabricated smooth poly{[ N , N ′‐bis(2‐octyl‐dodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐ alt ‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2))/PEO blend nanofibers by means of electrospinning and tested their electrical characteristics for the first time. The P(NDI2OD‐T2) nanofiber‐based FETs (Figure 10a) exhibited a electron mobility of 0.05–0.09 cm 2 · V −1 · s −1 , which nearly corresponded to that of thin film FETs (0.07–0.08 cm 2 · V −1 · s −1 ).…”

“…(c) The transfer (a drain voltage of 100 V) and (d) output characteristics of the single nanofiber FETs before and after rinsing with acetonitrile. Reproduced with permission 85. Copyright 2012, American Chemical Society.…”

“…To efficiently collect the uniaxially aligned ONFs, various alignment techniques have been developed and employed 19. Among them, the set‐up using two parallel separate collectors is most frequently used for the fabrication of electrospun ONF‐based FETs9, 37, 38, 40, 84–86 because it is very simple, and the suspended ONFs can be easily transferred to the device substrates 19. However, until now, perfectly aligned semiconducting ONFs with a constant separation and controlled orientation, which may be crucial for fabricating large‐area electronic device arrays, have not realized yet.…”

Light‐Emitting Electrospun Nanofibers for Nanophotonics and Optoelectronics

“…These P3HT nanofiber OFETs show very high field‐effect mobility (about 2 cm 2 · V −1 · s −1 ) and on/off ratio of the order of 10 5 , when an ion‐gel is used as gate dielectric 115. n‐type OFETs have also been recently demonstrated, based on single electrospun fibers of poly{[ N , N ′‐ bis (2‐octyldodecyl)‐naphthalene‐1,4,5,8‐ bis (dicarboximide)‐2,6‐diyl]‐ alt ‐5,5′‐(2,2′‐bithiophene)} blended with PEO 116…”