n-type doping of the diluted magnetic semiconductor Zn1−xMnxSe

Abad, H.; Jonker, B. T.; Yu, Wantai; Stoltz, S.; Petrou, A.

doi:10.1063/1.113957

Cited by 13 publications

(10 citation statements)

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“…Cl impurities form shallow donors in ZnSe with binding energy ε bind ≈ 26 meV, 27 and Bohr radius a B ≈ 28Å. 28 The donor concentration N D is a decisive parameter for the low-temperature conductivity mechanism.…”

Section: Experimental Datamentioning

confidence: 99%

Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors

et al. 2013

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We suggest a mechanism causing large positive magnetoresistance (MR) in dilute magnetic semiconductors when hopping via nonmagnetic donor impurities dominates the conductivity. The effect is due to the increase in the characteristic width σ of the donor energy distribution with increasing magnetic field B, caused by exchange interactions between magnetic Mn atoms and the electrons localized on nonmagnetic Cl donor impurities. Using general scaling arguments based solely on the dependencies of hopping rates on temperature and on the energies of hopping sites we show that this mechanism accounts quantitatively for our experimental data on MR in n-type Zn 1−x Mn x Se:Cl. We suggest a method for extracting the dependence of σ on magnetic field from the MR data. The mechanism explains the experimentally observed universal dependence of the MR effect on the ratio B/T at different temperatures T under the premise that transport is due to the nearest-neighbor or Mott hopping mechanism.

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Section: Experimental Datamentioning

confidence: 99%

Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors

et al. 2013

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“…12 More epitaxial Zn 1Ϫx Mn x Se films and microstructures reported in recent years ͑after 1990͒ were focused in the low Mn concentrations. 5,6,7,9,10,12,15,16 Efforts in growing high Mn composition and high quality Zn 1Ϫx Mn x Se materials and structures are needed for the further development of these promising materials and microstructures.…”

Section: Introductionmentioning

confidence: 99%

“…1 Magnetic ions, Mn 2ϩ , are random substituted with the Zn 2ϩ in the cation positions, leading to interesting magneto-optical properties, such as a giant Zeeman splitting of the band edges. 5 This has been utilized to obtain spin-dependent quantum confinement in tailored structures. 6,7 ZnSe/Zn 1Ϫx Mn x Se quantum well ͑QW͒ and superlattice ͑SL͒ structures are promising for next generation electro-optical and photonic devices.…”

Section: Introductionmentioning

confidence: 99%

Infrared and Raman spectroscopic study ofZn1−xMnxSematerials grown by molecu

Yang

Chou

et al. 1999

Phys. Rev. B

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Molecular beam epitaxy and optical investigation of Zn 1Ϫx Mn x Se epilayers over a large composition range (xϭ0 -0.78), grown on GaAs ͑001͒ substrates, are reported. The far-infrared ͑FIR͒ reflectance and Raman scattering were performed to characterize the film quality and study their optical and electrical properties. FIR and Raman data provide experimental evidence on the intermediate-mode phonon behavior for Zn 1Ϫx Mn x Se with x up to 0.78. Theoretical modeling fits of FIR spectra lead to the determination of optical parameters such as mode frequency, strength, damping constant, and electrical properties of dielectric constant, carrier concentration, mobility, conductivity, and effect mass, and their dependence on the Mn composition. Values of force constants of F MnSe ϭ17.1ϫ10 4 dyn cm 1 and F ZnSe ϭ14.7ϫ10 4 dyn cm Ϫ1 , and the high-frequency limit dielectric constant of MnSe, ⑀ ϱ ϭ5.4, are obtained. ͓S0163-1829͑99͒07147-7͔

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“…A similar behavior, studied for limited Mn concentrations of up to 11% was also reported elsewhere. 49 This drastic decrease in free-electron concentration is due to the formation of Mn-related defect complexes. Figure 11 compares the reciprocal room-temperature Hall and infrared mobilities ͓extracted from Eq.…”

Section: Hall Effect Measurements: Free-electron Concentration Andmentioning

confidence: 99%

Phonon and free-charge-carrier properties ofZn1−xMnxSeepilayers grown by molecular-beam epitaxy

et al. 2006

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Far infrared and mid infrared ͑FIR-MIR͒ reflectivity measurements have been carried out on two different series of undoped and chlorine-doped Zn 1−x Mn x Se epilayers grown by molecular-beam epitaxy. The FIR reflection studies performed upon the series of undoped Zn 1−x Mn x Se samples suggest an intermediate-mode behavior for the optical phonon modes in the composition range ͑0 ഛ x ഛ 0.43͒. In addition to the known ZnSe-like and MnSe-like phonon resonances a "weak-mode" feature is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent redshift. We suggest that this feature originates from the alloy disorder present in the samples. The shape of the reststrahlen band is found to change significantly with layer thickness. This is discussed in some detail for pure ZnSe epilayers. To extract some information about the electron effective mass, we performed room-temperature plasma edge measurements on chlorine-doped n-type Zn 1−x Mn x Se epilayers ͑0 ഛ x ഛ 0.13͒. Via Drude-Lorentz-type multioscillator fits to our data, we extracted the optical electron effective mass ͑m op * ͒ in a series of doped Zn͑Mn͒Se:Cl samples with different Mn contents and free-electron concentrations. Our results indicate that m op * in Zn 1−x Mn x Se is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different free-electron concentrations, m op * varied from 0.133 m 0 to 0.152 m 0 , while in Zn 0.87 Mn 0.13 Se: Cl samples, we found a variation from 0.095 m 0 to 0.115 m 0 within about ±9% experimental accuracy. From theoretical calculations, we determined the extrapolated room-temperature band-edge electron mass in ZnSe and Zn 0.87 Mn 0.13 Se to be about 0.132 m 0 and 0.093 m 0 , respectively. Additionally, from electrical Hall effect measurements on Zn 1−x Mn x Se: Cl epilayers, we found a drastic reduction in the free-electron concentration with increasing Mn content. The incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.

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n-type doping of the diluted magnetic semiconductor Zn1−xMnxSe

Cited by 13 publications

References 1 publication

Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors

Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors

Infrared and Raman spectroscopic study ofZn1−xMnxSematerials grown by molecu

Phonon and free-charge-carrier properties ofZn1−xMnxSeepilayers grown by molecular-beam epitaxy

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