“…The trap densities were calculated using the formula N t = (2 ε r ε 0 V TFL )/qL 2 , where N t represents the trap state density, ε 0 , ε r , q , and L are the vacuum permittivity, relative dielectric constant, elementary charge, and film thickness, respectively, and V TFL is the voltage value of the intersection of the ohmic region and the TFL region. 25 The electron and hole mobilities were calculated using Mott–Gurney's law with the formula J D = 9 ε r ε 0 μV b 2 /8 L 3 , where J D , μ , and V b represent the dark current density, the carrier mobility, and the applied voltage, respectively. 34,35 The calculated trap densities and carrier mobilities of the perovskite films with different solvent ratios are shown in Fig.…”