I&lt;inf&gt;D&lt;/inf&gt;-V&lt;inf&gt;D&lt;/inf&gt; and I&lt;inf&gt;D&lt;/inf&gt;-V&lt;inf&gt;G&lt;/inf&gt; analysis of 45nm NMOS with strained silicon on insulator (sSOI) by using simulation

Kasim, Nazirah Mohamat; Saleh, Nur Majidah; Kasim, Linda Mohd; Ahmad, Ausaf; Ismail, Ahmad Puad; Ismail, Noraini

doi:10.1109/isiea.2014.8049878

2014 IEEE Symposium on Industrial Electronics &Amp; Applications (ISIEA) 2014

DOI: 10.1109/isiea.2014.8049878

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I<inf>D</inf>-V<inf>D</inf> and I<inf>D</inf>-V<inf>G</inf> analysis of 45nm NMOS with strained silicon on insulator (sSOI) by using simulation

Nazirah Mohamat Kasim

Nur Majidah Saleh

Linda Mohd Kasim

et al.

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I<inf>D</inf>-V<inf>D</inf> and I<inf>D</inf>-V<inf>G</inf> analysis of 45nm NMOS with strained silicon on insulator (sSOI) by using simulation

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