<i>In situ</i> x-ray topography of silicon carbide during crystal growth by sublimation method

Yamaguchi, Hiroshi; Nishizawa, Shin Ichi; Kato, Tomohisa; Oyanagi, Naoki; Bahng, Wook; Yoshida, Sadafumi; Arai, Kazuo; Machitani, Y.; Kikuchi, Tetsuo

doi:10.1063/1.1150698

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…Using a special PVT reactor design with an opening at the bottom of the crucible, Yamaguchi et al [97] and Kato et al [98] performed fundamental studies of in situ x-ray topography during PVT growth.…”

Section: Process Control and In Situ Monitoringmentioning

confidence: 99%

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Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

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The review article describes the interplay of fundamental research and advanced processes that have made SiC a unique semiconductor material for power electronic devices. Related to the outstanding physical properties of SiC, the preparation of this material is quite challenging. Processing is carried out at elevated temperatures that require special emphasis on the design of the growth machine and the applied construction materials. Growth inside a closed growth chamber demands the usage of advanced sensors and sophisticated computer simulation of the growth process. The application of advanced 2D and 3D in situ x-ray visualization techniques enables the visualization of the growth process. Reduction of the density of structural defects, a prerequisite for the technical application in power electronic devices, based on fundamental research and understanding of the crystallographic as well as the electronic properties of SiC beyond the knowledge base of standard semiconductor materials.

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Section: Process Control and In Situ Monitoringmentioning

confidence: 99%

“…The more complex x-ray topography characterization method may be applied to investigate the nature and to a certain extend the propagation through the crystal (see e.g. [65,69,97,166]).…”

Section: D Line Defectsmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

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“…In order to overcome this point, the authors have applied the numerical simulation to see the phenomena inside a furnace [2,3,4,5]. The authors also developed the in-situ X-ray topography system to observe the crystal growth features inside a closed carbon crucible [6,7]. By using these observation tools, the SiC sublimation growth could be understand more detail [7,8,9,10], and could be controlled actively [3,11,12].…”

Section: Introductionmentioning

confidence: 99%

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

Nishizawa

Kato

Kitou³

et al. 2004

MSF

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The numerical simulation and in-situ X-ray topography were applied to observe the phenomena inside a crucible. Numerical simulation pointed out that macroscopic grown crystal quality such as grown crystal shape strongly depends on the temperature distribution inside a crucible. In-situ X-ray topography revealed that when the defects were generated, and how the defects were propagated. Most of defects were generated at the initial growth stage. It is important to control the initial stage in order to obtain a high quality SiC single crystal. Numerical simulation also suggested that it is important reduce the residual stress in a grown crystal in order to avoid the dislocation occurrence. From these results based on numerical simulation and experiment, SiC sublimation growth was controlled actively, and the large and high quality SiC single crystal have been grown.

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