<i>In situ</i> x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Pereira, Jérémy; Pichon, Laurianne; Dussart, Rémi; Cardinaud, Christophe; Duluard, Corinne; Oubensaid, El-Houcine; Lefaucheux, Philippe; Boufnichel, Mohamed; Ranson, P.

doi:10.1063/1.3085957

Cited by 80 publications

(60 citation statements)

References 11 publications

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“…Such a shi could only be explained by the presence of uorine, since the formation of SiO x F 4Àx can shi the silicon peak to similar energies. 25 Indeed, a survey for the presence of uorine revealed the existence of a uorine peak at $685 eV for the nitrogenactivated glass surface. Fluorine was found also in all activated samples (but not in the non-activated), however its effect on the binding energies of the other samples was minute.…”

Section: Study Of Plasma-activated Surfacesmentioning

confidence: 99%

Low-temperature direct bonding of silicon nitride to glass

Pasternak

Paz

2018

RSC Adv.

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Direct bonding may provide a cheap and reliable alternative to the use of adhesives. While direct bonding of two silicon surfaces is well documented, not much is known about direct bonding between silicon nitride and glass. This is unfortunate since silicon nitride is extensively used as an anti-reflection coating in the PV industry, often in contact with a shielding layer made of glass. A series of bonding experiments between glass and SiN was performed. The highest bonding quality, manifested by the highest bonding energy and lowest void area, was obtained with pairs that had been activated by nitrogen plasma followed by post-contact thermal annealing at 400 C. HRTEM imaging, HRTEM-EDS and EELS measurements performed on the thin films prepared from bonded samples by Focused Ion Beam (FIB) revealed a clear defect-free interface between the silicon nitride and the glass, 4 nm in thickness. ATR FT-IR measurements performed on activated surfaces prior to contact indicated the formation of silanol groups on the activated glass surface and a thin oxide layer on the silicon nitride. An increase in the bearing ratio of the glass following activation was noticed by AFM. A mechanism for bonding silicon nitride and glass is suggested, based on generation of silanol groups on the glass surface and on oxidation of the silicon nitride surface. The results point out the importance of exposure to air, following activation and prior to bringing the two surfaces into contact.

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Section: Study Of Plasma-activated Surfacesmentioning

confidence: 99%

Low-temperature direct bonding of silicon nitride to glass

Pasternak

Paz

2018

RSC Adv.

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“…As known for the cryogenic dry etching, two gases (i.e., O 2 and SF 6 ) were simultaneously utilized to etch cryogenically cooled silicon wafers. It should be noted that the passivation layer (i.e., SiO x F y ) is formed only on the cooled silicon wafer surfaces [11][12][13][14][15]. Moreover, this layer was highly influenced by the oxygen gas content and the temperature.…”

Section: Inductively Coupled Plasma (Icp) Cryogenic Dry Etchingmentioning

confidence: 98%

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

et al. 2013

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The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 µm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 -20 µm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 ± 0.04 kHz and a quality factor of 1302 ± 267 are measured in air for a fabricated rectangular cantilever (500×100×13.5 µm 3 ). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

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“…This etching method uses SF 6 and O 2 for the gaseous etch products. In contact to silicon, those gases form a passivation layer of SiO x F y [9]. For temperatures below -75 °C, this layer is solid.…”

Section: Inductively Coupled Plasma (Icp) Deep Reactive Ion Etching (mentioning

confidence: 99%

Fabrication of vertical nanowire resonators for aerosol exposure assessment

et al. 2013

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Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 µm). In dry etching process, the etch rate is set high of 1.5 µm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 µm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 µm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Cited by 80 publications

References 11 publications

Low-temperature direct bonding of silicon nitride to glass

Low-temperature direct bonding of silicon nitride to glass

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

Fabrication of vertical nanowire resonators for aerosol exposure assessment

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