In situ vulcanization synthesis of CuInS₂ nanosheet arrays for a memristor with a high on–off ratio and low power consumption

Abstract

The ternary copper indium sulfide nanosheet arrays fabricated by the one-step, low-cost in situ vulcanization method demonstrate high memory performance, exhibiting great application potential in image storage.

CuInS2 quantum dots-based unipolar resistive switching for non-volatile memory applications

“…The oxidation of Cu and its migration in the presence of the external electric eld give rise to the RS phenomenon in many device structures where Cu is present as an electrode or in the functional layer matrix. 15,17,26 The presence of copper ions will have a notable impact on inducing the switching behavior in the device. Initially, the device was in the HRS as shown in Fig.…”

“…21–25 Recently, nanocomposites and nanosheets of CuInS 2 have been investigated for RS behaviour, which exhibits a large switching window and low power consumption. 26,27 Yun et al utilized CuInS 2 quantum dots (QDs) as nano-composites with graphene oxide to enhance device performance. 27 T. Ahmad et al employed magnetron sputtering for CuInS 2 film deposition, demonstrating bipolar RS behavior; however, the requirement for high vacuum conditions during sputtering limits scalability for mass production.…”

“…[21][22][23][24][25] Recently, nanocomposites and nanosheets of CuInS 2 have been investigated for RS behaviour, which exhibits a large switching window and low power consumption. 26,27 29 In this study, a pristine CuInS 2 QDs based solution processable thin lm is investigated as a functional layer for novel Al/CuInS 2 /ITO structured RS devices. The facile synthesis of CuInS 2 QDs, coupled with the subsequent fabrication of thin lms employing solution-processable techniques and lowtemperature treatment, [30][31][32] renders the material amenable for the scalable production of devices.…”

Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO3

“…Cu and Ag metals are most commonly used for the active electrode in ECM devices. [40][41][42][43][44][45][46] Due to its high oxygen affinity, when Al is used together with an amorphous electrolyte such as SiO 2 , it forms a passive stable Al 2 O 3 barrier that reduces the current and subsequent further oxidation as shown by Luebbens et al [47] The Al oxidation is irreversible i.e., oxidized Al cannot return to the metallic state thus precluding Set/Reset operations. [47] This is why there are no ECM resistive switching cells combining Al and SiO 2 and more generally, no ECM resistive switching cells combining Al and an amorphous oxide, to the best of our knowledge.…”

CsBr Immersion for Organic–Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole–Frenkel Emission, and Electrical Properties

“…Resistive random access memory (RRAM) is considered the most promising candidate for new nonvolatile memory devices. − RRAM, also known as resistive switching memory (RSM), consists of RSM cells with an active layer, such as a metal oxide, a perovskite, or a polymer material, inserted between electrodes. − Organic–inorganic hybrid perovskites (OIHPs) with the ABX 3 structure, where A is an organic cation, B is an inorganic cation, and X is a halide ion, are materials whose optical and electronic properties can be tuned and optimized for various applications. OIHPs demonstrate great potential for use in RRAM due to their many outstanding characteristics, such as excellent carrier mobility, low trap density, low activation energy for halide vacancy formation, and easy fabrication. − …”