In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

Abstract

The organic−inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.

Ion Migration in Metal Halide Perovskites: Characterization Protocols and Physicochemical Mechanisms

“…However, not all defect states are involved in ion migration, and the role of different ionic species in ion migration is not identical . More importantly, ion migration does not always have a detrimental effect on MHP-based devices; in fact, the mobile ions may be effectively utilized for information storage in MHP memristors . Therefore, aiming to improve and extend the practical application of MHPs, it is essential to make further efforts to specifically regulate the migration dynamics of targeted ionic species without altering the intrinsic photophysical and physicochemical properties of the materials.…”

Coexistance of the Negative Photoconductance Effect and Analogue Switching Memory in the CuPc Organic Memristor for Neuromorphic Vision Computing

“…The black phosphorus nanosheet–CsPbBr 3 ENOM arrays were proposed to simulate to the lobula giant movement detector for collision prediction . In addition, the memristor with high-performance electrical switching behaviors, such as analogue switching memory, enough conductance states, ultralow voltage operations, etc., − was integrated with light-sensing arrays to simulate the function of the human vision system. − In our previous works, the memristor with light-intensity-tunable positive/negative photoconductance effects or multiconductance levels was developed for the implementation of in-sensing neuromorphic computing. − The above research in neuromorphic visual systems, including ENOT and ENOM, is perusing a multifunctional, high-mimicking, and highly efficient photoelectronic device.…”