In situstudy of atomic layer deposition Al2O3on GaP (100)

Dong, Hong; Brennan, Barry; Qin, Xiaoye; Zhernokletov, D. M.; Hinkle, Christopher L.; Kim, J.; Wallace, Robert M.

doi:10.1063/1.4821779

Cited by 11 publications

(11 citation statements)

References 30 publications

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“…This likely causes a slight difference in the binding energy separation of Me‐PO x to the corresponding P‐Ga bulk peak between this work and the previous report. [16a] That also explains the slight difference in the binding energy shift of the Ga oxides referenced to the P‐Ga bulk peak for the Ga 3d spectra compared to previous “half cycle” work. [16a]…”

Section: Resultsmentioning

confidence: 87%

“…After the ALD of HfO 2 thin film on the GaP substrates, there is still no P oxides detected by XPS on this sample, as shown in Figure b. This fact suggests no detectable interface re‐oxidation occurs after the ALD process, likely benefiting from the “clean‐up” effect of the metal precursor . Figure c,d shows the P 2p spectra for the GaP/HfO 2 stack after PDA at 400 and 500 °C, respectively, taking with analysis angles of 35°, 45°, 60°, 70°, and 80°.…”

Section: Resultsmentioning

confidence: 90%

“…The binding energy (BE) separations of all kinds of Ga and P oxides are consistent with those in the previous reports. [16a] According to the sampling depth of Ga 2p 3/2 core level listed above, the emergence of the Ga oxide peaks suggests the diffusion of Ga oxides in or through the HfO 2 film after PDA at 600 °C for the GaP/HfO 2 stack. The presence of the P‐oxide peaks suggests the interface re‐oxidation after PDA at 600 °C for the GaP/HfO 2 stack.…”

Section: Resultsmentioning

confidence: 99%

“…The peak with a binding energy separation of 1.59 eV to the GaP bulk peak is assigned to Ga oxides. [16a] The intensity ratio of the Ga oxide peaks to the corresponding bulk peak decreases significantly as the take‐off angle changes from 45° to 80°, which can be attributed to the Ga oxides diffusion into the Al 2 O 3 film. [8a]…”

Section: Resultsmentioning

confidence: 99%

“…The peak with a binding energy separation of 5.65 ± 0.05 eV to the GaP bulk peak is assigned to Me‐PO x (Me representing Al or Ga). [16a,21] For the P oxides, it is reasonable to assume that Ga/Al‐PO x is predominant at the interface, while Al‐PO x is dominant if some of the P oxides diffuse into the Al 2 O 3 matrix. This likely causes a slight difference in the binding energy separation of Me‐PO x to the corresponding P‐Ga bulk peak between this work and the previous report.…”

Section: Resultsmentioning

confidence: 99%

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Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Wang

Zhao

Huang

et al. 2017

Adv Materials Inter

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High‐quality interface between high‐mobility III–V compound semiconductor and high‐k dielectrics is critical for achieving high electrical performance of the devices. Elemental diffusion through the high‐k dielectrics from III–V semiconductors (e.g., InP, InAs, and InGaAs) upon the atomic layer deposition process and during the postdeposition annealing (PDA) at low temperature rises a concern with the reliability of III–V compound semiconductor devices. In this work, the thermal stability of GaP/high‐k dielectrics interface has been studied in terms of elemental diffusion upon PDA, using angle‐resolved X‐ray photoelectron spectroscopy. The Ga and P oxides are below the detection limit of X‐ray photoelectron spectroscopy for the GaP/HfO2 stack after PDA at 400 °C, and for the GaP/Al2O3 stack after PDA at 500 °C. Outdiffusion of Ga and P atoms through HfO2 film is detected by time‐of‐flight secondary ions mass spectrometry after PDA at 500 and 600 °C. Highly stable GaP/high‐k dielectrics interfaces suggest that a thin barrier layer of wide bandgap GaP between the III–V semiconductor channel materials and high‐k dielectrics would benefit the reliability of the devices.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Wang

Zhao

Huang

et al. 2017

Adv Materials Inter

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Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN

Henning

Bartl

Zeidler

et al. 2021

Adv Funct Materials

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Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self‐limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth. Thus, the ability to create closed monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, encapsulation of c‐plane gallium nitride (GaN) with ultimately thin (≈3 Å) aluminum oxide (AlOx) is reported, which is enabled by the partial conversion of the GaN surface oxide into AlOx using sequential exposure to trimethylaluminum (TMA) and hydrogen plasma. Introduction of monolayer AlOx decreases the work function and enhances reactivity with phosphonic acids under standard conditions, which results in self‐assembled monolayers with densities approaching the theoretical limit. Given the high reactivity of TMA with surface oxides, the presented approach likely can be extended to other dielectrics and III–V‐based semiconductors, with relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.

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Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al₂O₃ Interface Induced by Titanium Layer

Feng

Sun

Sun³

et al. 2021

Adv Materials Inter

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Low interface oxide concentration is desired for III‐V semiconductor/high k dielectrics stacks to get high‐performance devices. The remote scavenging effect is observed upon Ti metal deposition on the InP/Al2O3 system, characterized by in situ angle resolved X‐ray photoelectron spectroscopy and time‐of‐flight secondary ion mass spectrometry, as well as ex situ cross‐sectional transmission electron microscopy. The mechanism is investigated by O18 tracing. Two mechanisms are proposed for this remote scavenging effect. The impact of this remote scavenging effect is studied by metal oxide semiconductor (MOS) capacitors fabrication and characterization. This work sheds light on InP‐based MOS devices.

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In situstudy of atomic layer deposition Al₂O₃on GaP (100)

Cited by 11 publications

References 30 publications

Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al₂O₃ Interface Induced by Titanium Layer

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In situstudy of atomic layer deposition Al2O3on GaP (100)

Cited by 11 publications

References 30 publications

Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Thermal Stability Study of GaP/High‐k Dielectrics Interfaces

Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium Layer

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In situstudy of atomic layer deposition Al₂O₃on GaP (100)

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al₂O₃ Interface Induced by Titanium Layer