<i>In Situ</i>
            Real‐Time Characterization of Thin‐Film Growth

Pistor, Paul; Mainz, Roland; Heinemann, Marc Daniel; Unold, Thomas; Scheer, Roland

doi:10.1002/9783527699025.ch16

Cited by 5 publications

(3 citation statements)

References 63 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In-situ analysis by X-ray diffraction (XRD) and white light reflectometry (WLR) during the CIGSe absorber growth allows not only to detect planar defects, but offers the possibility to understand their formation and annihilation during thin film deposition (the reader is referred to reference Pistor et al (2016) for an overview). Extended structural defects may affect the XRD patterns (Treacy et al, 1991), which makes them detectable in real time by in-situ XRD.…”

Section: In-situ Monitoring Of Cu(inga)se 2 Growthmentioning

confidence: 99%

Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells

et al. 2018

View full text Add to dashboard Cite

The continuous improvement of Cu(In,Ga)Se 2 (CIGSe) solar cells relies considerably on advanced characterization of individual layers in the solar-cell stacks as well as of completed CIGSe devices. The present contribution provides an overview of corresponding efforts performed by various research groups at Helmholtz-Zentrum Berlin für Materialien und Energie GmbH. In-situ growth monitoring of CIGSe absorber layers by means of energy-dispersive X-ray spectrometry and light scattering is described, as well as structural analyses by means of X-ray and neutron diffraction. In addition, the characterization of surfaces and interfaces by soft X-ray and electron spectroscopy, the microscopic analysis by means of correlative electron microscopy, and optoelectronic characterization by optical spectroscopy are highlighted. The present contribution shows which substantial efforts in a research network are necessary in order to obtain deeper insight into materials properties and potentially limiting factors for the device performance, as well as to be able to control these factors during the solar-cell production.

show abstract

Section: In-situ Monitoring Of Cu(inga)se 2 Growthmentioning

confidence: 99%

Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Several groups have studied the selenisation of Cu-In-Ga precursors by in-situ x-ray diffraction (XRD) [21][22][23][24][25][26] or energy dispersive X-ray diffraction (EDXRD) [27]. However, the metallic phases initially present or their possible impact on selenisation were not the focus of those studies.…”

Section: Introductionmentioning

confidence: 99%

In-situ X-ray diffraction annealing study of electroplated and sputtered Cu-In-Ga precursors for application to sequential Cu(In,Ga)Se2 processes

Aninat¹,

Hovestad²,

Zelst³

et al. 2022

Thin Solid Films

View full text Add to dashboard Cite

“…White light reflectometry (WLR) is capable of providing comprehensive information on the microstructure8 and bandgap9 of semiconducting thin films. Recently, we have extended the WLR method to measure the sub-band gap absorption of CIGS thin films10.…”

mentioning

confidence: 99%

Evolution of opto-electronic properties during film formation of complex semiconductors

Heinemann

Mainz

Österle

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Optical and electrical properties of complex semiconducting alloys like Cu(In,Ga)Se2 (CIGS) are strongly influenced by the reaction pathways occurring during their deposition process. This makes it desirable to observe and control these properties in real-time during the deposition. Here we show for the first time the evolution of the band gap and the sub-band-gap defect absorption of CIGS thin film as well as surface roughness during a three-stage co-evaporation process by means of an optical analysis technique, based on white light reflectometry (WLR). By simultaneously recording structural information with in-situ energy dispersive X-ray diffraction and X-ray fluorescence we can directly correlate the evolution of opto-electronic material parameters with the structural properties of the film during growth. We find that the surface roughness and the sub-gap light absorption can be correlated with the phase evolution during the transformation from (In,Ga)2Se3 to Cu(In,Ga)Se2 by the incorporation of Cu into the film. Sub-bandgap light absorption is found to be influenced by the Cu-saturated growth phase and is lowered close to the points of stoichiometry, allowing for an advanced process design.

show abstract

In Situ Real‐Time Characterization of Thin‐Film Growth

Cited by 5 publications

References 63 publications

Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells

Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells

In-situ X-ray diffraction annealing study of electroplated and sputtered Cu-In-Ga precursors for application to sequential Cu(In,Ga)Se2 processes

Evolution of opto-electronic properties during film formation of complex semiconductors

Contact Info

Product

Resources

About