<i>In Situ</i> Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition

Orvis, Thomas; Kumarasubramanian, Harish; Surendran, Mythili; Kutagulla, Shanmukh; Cunniff, Austin; Ravichandran, Jayakanth

doi:10.1021/acsaelm.1c00024

Cited by 6 publications

(3 citation statements)

References 50 publications

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“…Furthermore, additional experiments with SrZrO 3 grown on STO, shown in the Supporting Information, validate this technique for other complex oxide systems. The simplicity of both modeling and data collection will enable direct understanding of the growth mechanisms and compositional evolution during thin film growth 43 and engineering complex oxide heterostructures for a variety of applications. We used DFT calculations to develop an understanding of the energetics of termination switching in STO/SRO heterostructures observed experimentally.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

et al. 2021

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The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive characterization are critical for active monitoring and control of epitaxial synthesis, and hence the atomic-scale engineering of heterostructures and superlattices. Termination switching, especially as an interfacial process in ternary complex oxides, has been studied using a variety of probes, often ex situ; however, direct observation of this phenomena is lacking. To address this need, we establish in situ and real time reflection high energy electron diffraction and Auger electron spectroscopy for pulsed laser deposition, which provide structural and compositional information of the surface during film deposition. Using this unique capability, we show, for the first time, the direct observation and control of surface termination in complex oxide heterostructures of SrTiO3 and SrRuO3. Density-functional-theory 2 calculations capture the energetics and stability of the observed structures and elucidate their electronic behavior. This demonstration opens up a novel approach to monitor and control the composition of materials at the atomic scale to enable next-generation heterostructures for control over emergent phenomena, as well as electronics, photonics, and energy applications.Ernzerhof parameterization to describe the electron-ion and the electronic exchange-correlation interactions, respectively. [46,47] Additional details may be found in the supporting information.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

et al. 2021

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“…Auger electron spectroscopy could also potentially be a target for active process control to maintain consistent composition of PLD thin films. [19] 4.4 AIPC TM for PLD AIPC TM in the context of oxide semiconductor PLD would allow real-time multivariate tuning of multiple process parameters simultaneously to achieve desired growth rates for thin film composition.…”

Section: Advanced Process Control Of Pldmentioning

confidence: 99%

Artificial intelligence process control: deep reinforcement learning for Ga2O3 wafer production

Constantin¹,

Putman²,

Bordelanne³

2023

Oxide-Based Materials and Devices XIV

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Process improvement for the manufacture of effective high performance gallium oxide (Ga2O3) based semiconductor devices is imperative in consolidating Ga2O3 as a singularly promising material for cost effective, mass-producible, and robust manufacturing. Other wide bandgap silicon alternatives (i.e., SiC and GaN) are impeded by high costs and complicated, time-consuming adjustments. Beginning with a bandgap of 4.7eV, Ga2O3 offers an unparalleled solution when growth parameters are tuned and controlled using deep reinforcement learning agents. Ga2O3 wafer production employs (non-exclusively) the scalable and cost-effective Czochralski method for ingot growth and MOCVD process for epitaxy growth, making it a viable candidate for high volume commercial radiofrequency device manufacture. As crystal quality and electron transport depend on reactor temperature, vertical gas and precursors flows, chamber pressure, and a host of kinetic parameters during growth, it follows that the configuration space for Ga2O3 deposition is expansive and costly to explore. Enhancing growth rate of Ga2O3 films without compromising crystal quality can be accomplished through implementing insights offered by ancillary deep learning models. Artificial intelligence techniques that take programmed reactor settings, sensor-read environmental conditions, resulting crystallographic defectivity, and overall outgoing quality as inputs can infer processing improvements upstream using neural networks trained by skilled engineers. My stipulations call for a hardware accelerated deep learning controller (DLC) that digests the multimedia output of reactors, MOCVD systems, and metrology tools to optimize Ga2O3 crystal quality and ultimately increase die yields, reduce waste, accelerate product development, decrease time to market, and eliminate need for labor-exhaustive testing.

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“…In this regard, the pulsed laser deposition (PLD) growth method stands out as a relatively unexplored yet potentially scalable method for direct deposition of 2D materials with atomic control 20 directly onto ionomer membranes at room temperature. Particularly, boron nitride (BN) grown at room temperature by the PLD method has been shown to result in atomically thin layers on at sapphire substrates 21 .…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline Boron Nitride Coating for High Conductivity, Low Temperature Proton Exchange Membrane Fuel Cells

Akinwande,

Kutagulla,

Biswas

et al. 2024

Preprint

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Hydrogen fuel cells based on proton exchange membrane (PEM) technology are promising as an alternative to fossil fuel-based energy. Conventional PEMFC technology is operated at fully humidified conditions in a narrow temperature range (~ 80 oC) to maintain sufficient proton conductivity and power output, which necessitates high cost of operation. In this work, we demonstrate a scalable, room temperature coating of ultrathin boron nitride (BN) via pulsed laser deposition (PLD) that simultaneously increases conductivity of perfluorosulfonic acid (PFSA) based membranes while decreasing the crossover. Remarkably, BN coated membranes show a 20% increase in performance at current operational conditions (1.485 A/cm2 @ 0.6 V) and a 20% increase in power density (0.965 W/cm2) while exhibiting a maximum crossover current decrease of 32% (3.58 mA/cm2) relative to industry standard Nafion™ 211. Furthermore, we demonstrate a reduction of operational temperatures to as low as 60 oC with modified membranes without performance impact, thereby affording substantial reduction of the PEMFC operational cost. These observations are practically relevant for the development of next generation PEM technology by enabling more scalable and cost-effective high performance fuel cell stacks.

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In Situ Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition

Cited by 6 publications

References 50 publications

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Artificial intelligence process control: deep reinforcement learning for Ga2O3 wafer production

Nanocrystalline Boron Nitride Coating for High Conductivity, Low Temperature Proton Exchange Membrane Fuel Cells

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