Abstract:Quadrupole mass spectrometry (QMS) has been used as an in-situ diagnostic technique for GaAs etched with an electron cyclotron resonance source. Changes in the detected signal intensities for reactive species and etch products have been related to corresponding changes in the etch rate as several process parameters were varied. The detected 75As+ and to a lesser degree, 35C1+ and 70C12+, were observed to follow etch rate as microwave power, rf power, source to sample distance, temperature, and pressure were va… Show more
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