In SituGrowth of β‐SiC Nanowires in Porous SiC Ceramics

Abstract

Polycarbosilane (PCS) was used as a precursor to prepare porous silicon carbide (SiC) ceramics with in situ growth of b-SiC nanowires. The pore size of the as-prepared porous ceramics was 1.37 lm in average, and had a narrow distribution. The nanowires with diameters ranging from B10 to 50 nm existed in the channels of the porous body. Their morphology, microstructure, and composition were characterized by field emission scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy, which confirmed that the nanowires had a single-crystal b-SiC structure with the /111S growth direction. A vapor-liquid-solid process was discussed as a possible growth mechanism of the b-SiC nanowires.

Factors that influence the flexural strength of SiC-based porous ceramics used for hot gas filter support

“…[1][2][3] Silicon carbide (SiC) ceramic, which has high temperature stability, low thermal expansion coefficient, high corrosion resistance, high thermal conductivity and excellent mechanical properties, is suitable material as porous ceramic supports for hot gas cleaning. [4][5][6][7][8] However, it is difficult to sinter pure SiC ceramics below 2100 • C due to its strong covalent nature. 9 One effective way of fabricating porous SiC ceramics at low temperatures is to add a small amount of bonding phases to bond SiC particles together.…”

A simple synthesis of large-scale SiC–SiO2 nanocables by using thermal decomposition of methanol: Structure, FTIR, Raman and PL characterization

“…A lot of materials, such as Si [2,3], ZnO [4], WS 2 [5], MoS 2 [6], GaN [7], and SiC [8][9][10][11][12][13], have been synthesized as 1-D nanostructures. Recent research results suggest that 1-D SiC nanostructures are the potential candidates for light-emitting device [8], nano-reinforced composite materials [9], nanoelectronic devices [10], catalyst supports [11,12], and nano-electromechanical systems [13], due to their outstanding properties such as wide bandgap, high hardness, excellent thermal conductivity, high electron mobility, high saturation drift velocity, etc. Up to now, various synthesis methods have been explored to produce SiC-based 1-D nanostructures including laser ablation, physical evaporation, and chemical vapor deposition [14].…”

SiC nanowires grown on activated carbon in a polymer pyrolysis route

“…Several groups found some SiC nanowires when preparing porous SiC ceramics with polycarbosilane as the adhesive agent [29,30]. They consider that the SiC nanowires can increase the toughness of the porous ceramics.…”