<i>In Situ</i> Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes

Nelson, George T.; Ouin, Gildas; Polly, Stephen J.; Wynne, Kevin B.; Haberl, A.W.; Lanford, W. A.; Lowell, Robert; Hubbard, Seth M.

doi:10.1109/tns.2020.3011729

Cited by 8 publications

(1 citation statement)

References 46 publications

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“…[8][9][10] Up to now, the studies on irradiation damage effects of InGaAs IR-PDs have mostly focused on the degradation of dark current and irradiationinduced electrical traps. [11][12][13][14] In addition, non-ionizing energy loss and dark current damage factor have also been developed to assess and anticipate device's deterioration. [15,16] However, few studies have been conducted on the microscopic damage mechanism of γ irradiation by optical techniques.…”

Section: Introductionmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

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Section: Introductionmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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Insight of displacement cascade evolution in gallium arsenide through molecular dynamics simulations

Liao

et al. 2022

Computational Materials Science

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Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation

Li,

Maliya

et al. 2023

AIP Advances

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The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase significantly after irradiation, while the capacitance of the device decreases slightly after irradiation, where the spectral response parameters are less affected by irradiation. The increase in dark current is essentially linear with the displacement damage dose. Finally, the effect of proton irradiation on the optical communication system is simulated and the results show that the bit error rate of the system increases with the increase in irradiation fluence, which seriously affects the sensitivity of the optical communication system.

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In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes

Cited by 8 publications

References 46 publications

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Insight of displacement cascade evolution in gallium arsenide through molecular dynamics simulations

Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation

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