2021
DOI: 10.6023/a21060265
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In-situ Construction of 2D/3D ZnIn2S4/TiO2 with Enhanced Photocatalytic Performance

et al.

Abstract: To study the influence of the construction of heterojunction on the visible-light response range and the photo-generated charge carriers separation efficiency of TiO2, two dimensional/three dimensional (2D/3D) ZnIn2S4/TiO2 heterojunctions were synthesized by high-temperature calcination followed by a facile oil bath method, and were investigated for the photodegradation of Rhodamine B (RhB) and tetracycline (TC). X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM… Show more

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Cited by 10 publications
(5 citation statements)
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References 48 publications
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“…In general, the flat band potential is approximately equal to the CB potential for n-type semiconductors and the VB potential for p-type semiconductors, respectively. 35 Therefore, by subtracting the optical band gap (2.25 eV) from the CB, the potential of the VB of BA 2 PbI 4 crystals with respect to Ag/AgCl is calculated to be 1.79 V vs. Ag/AgCl.…”
Section: Resultsmentioning
confidence: 99%
“…In general, the flat band potential is approximately equal to the CB potential for n-type semiconductors and the VB potential for p-type semiconductors, respectively. 35 Therefore, by subtracting the optical band gap (2.25 eV) from the CB, the potential of the VB of BA 2 PbI 4 crystals with respect to Ag/AgCl is calculated to be 1.79 V vs. Ag/AgCl.…”
Section: Resultsmentioning
confidence: 99%
“…1C, the characteristic peaks at 1022.0 eV and 1045.1 eV were attributed to Zn 2p 3/2 and Zn 2p 1/2 , respectively, indicating the existence of Zn 2+ . 22 In Fig. 1D, the characteristic peaks of In 3d 5/2 and In 3d 3/2 were located at 444.9 eV and 452.5 eV, respectively, which indicated the existence of In 3+ .…”
mentioning
confidence: 85%
“…Among the semiconductor materials, TiO 2 , as a wide bandgap (E g ~3.2 eV) semiconductor material, is widely considered as an ideal candidate to fabricate heterojunction with ZnIn 2 S 4 due to its excellent stability, nontoxicity, and low cost [ 17 ], which has been widely applied in photocatalytic H 2 production [ 18 ], pollution degradation [ 19 ], CO 2 reduction [ 20 ], and organic synthesis [ 21 ]. More importantly, the energy band position of ZnIn 2 S 4 is above that of TiO 2 allowing for photogenerated carriers transfer between ZnIn 2 S 4 and TiO 2 , and thus coupling ZnIn 2 S 4 and TiO 2 contributes to addressing the shortfalls of ZnIn 2 S 4 [ 22 ].…”
Section: Introductionmentioning
confidence: 99%