“…Among the semiconductor materials, TiO 2 , as a wide bandgap (E g ~3.2 eV) semiconductor material, is widely considered as an ideal candidate to fabricate heterojunction with ZnIn 2 S 4 due to its excellent stability, nontoxicity, and low cost [ 17 ], which has been widely applied in photocatalytic H 2 production [ 18 ], pollution degradation [ 19 ], CO 2 reduction [ 20 ], and organic synthesis [ 21 ]. More importantly, the energy band position of ZnIn 2 S 4 is above that of TiO 2 allowing for photogenerated carriers transfer between ZnIn 2 S 4 and TiO 2 , and thus coupling ZnIn 2 S 4 and TiO 2 contributes to addressing the shortfalls of ZnIn 2 S 4 [ 22 ].…”