<i>In situ</i> chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

Cho, Soon; Rubloff, Gary W.; Aumer, M. E.; Thomson, D. B.; Partlow, Deborah P.; Parikh, Rinku P.; Adomaitis, Raymond A.

doi:10.1116/1.1993616

Cited by 5 publications

(19 citation statements)

References 46 publications

(56 reference statements)

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“…In fact, the data discussed in this article are from the same HEMT heterostructure growth runs presented in our previous publication on real-time product crystal quality prediction. 20 Details of the exact equipment configurations and process conditions used are described in the same article and are not repeated here.…”

Section: A Hemt Heterostructure Growth By Mocvdmentioning

confidence: 99%

“…20 The process and residual gases were sampled directly from the reactor downstream via a 1 / 16 in. o.d.…”

Section: B Real-time In Situ Process Sensing By Mass Spectrometrymentioning

confidence: 99%

“…These various components of APC ͑i.e., course correction, FDC, and contamination control͒ work to complement one another as demonstrated in this article and our previous publications. 19,20 …”

Section: Introductionmentioning

confidence: 98%

“…19 In addition, both FDC and course correction of GaN epilayer crystal quality ͑as verified by postprocess x-ray diffraction to 1%-5% precision͒ have been made possible by the methane/ a͒ Current affiliation: Intel Corporation; electronic mail: soon.cho@intel.com b͒ Author to whom correspondence should be addressed; electronic mail: rubloff@isr.umd.edu ethane byproducts ratio monitored in real time during growth. 20 Both the AlGaN cap layer thickness control and GaN epilayer crystal quality control are needed during the respective film growth periods of the process. These realtime control approaches provide a number of important advantages compared to the run-to-run control technology which is already a mature component of APC in the industry-e.g., real-time control can compensate for random short-term variability that occurs within a process in addition to the long-term systematic process drift.…”

Section: Introductionmentioning

confidence: 99%

“…In this article we report the application of real-time, in situ sensing to material quality prediction, fault detection, and contaminant control, as extensions of our prior metrology and crystal growth results in GaN-based systems. 19,20 Real-time course correction for the critical AlGaN cap layer thickness ͑ϳ1% control of ϳ20 nm͒ has been enabled by metrologies based on integration of methane and ethane byproduct signals measured by mass spectrometer. 19 In addition, both FDC and course correction of GaN epilayer crystal quality ͑as verified by postprocess x-ray diffraction to 1%-5% precision͒ have been made possible by the methane/ a͒ Current affiliation: Intel Corporation; electronic mail: soon.cho@intel.com b͒ Author to whom correspondence should be addressed; electronic mail: rubloff@isr.umd.edu ethane byproducts ratio monitored in real time during growth.…”

Section: Introductionmentioning

confidence: 99%

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Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Cho

Rubloff

Aumer

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Gallium nitride and its alloys promise to be key materials for future heterojunction semiconductor devices aimed at high frequency, high power electronic applications. However, manufacturing for such high performance products is challenged by reproducibility and material quality constraints that are notably higher than those required for optoelectronic applications. To meet this challenge, in situ mass spectrometry was implemented in AlGaN∕GaN∕AlN metalorganic chemical vapor deposition processes as a real-time process and wafer state metrology tool. In particular, the various pregrowth gas phase impurity levels within the reactor, measured by mass spectrometry in real time, were correlated to photoluminescence band-edge and deep-level properties measured postprocess. Band-edge intensities increased and deep-level intensities decreased with lower oxygen-containing impurity levels in the pregrowth environment. These real-time indications of oxygen impurity incorporation were used for fault detection and to optimize preprocess reactor conditioning involving degassing of the wafer susceptor and furnace liner elements. Because this in situ sensing provides a control on contaminants to assure high material quality and a fault detection capability as well, it is now implemented routinely for both purposes. These real-time contamination control and fault detection strategies complement an overall advanced process control program for GaN-based semiconductor manufacturing, offering a systematic methodology to improve the product quality of GaN-based electronic devices.

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Section: A Hemt Heterostructure Growth By Mocvdmentioning

confidence: 99%

“…20 The process and residual gases were sampled directly from the reactor downstream via a 1 / 16 in. o.d.…”

Section: B Real-time In Situ Process Sensing By Mass Spectrometrymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Cho

Rubloff

Aumer

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

Cho

Janiak

Rubloff

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In situ mass spectrometry is implemented in AlGaN∕GaN∕AlN metalorganic chemical vapor deposition processes on SiC substrates as a real-time process- and wafer-state metrology tool. Dynamic chemical sensing through the process cycle, carried out downstream from the wafer, revealed generation of methane and ethane reaction by-products as well as other residual gas species. The methane and ethane by-products are believed to reflect the two parallel chemical reaction pathways leading to GaN-based materials growth, namely the gas phase adduct formation route and the direct surface decomposition of the metalorganic precursor, respectively. Having detected both types of by-products as evidence for the presence of both paths, we monitored and integrated the methane and ethane signals to derive a real-time film thickness metric. Integrating the sum of the two by-product signals in this manner through the AlGaN growth period (∼1min or less) enabled us to predict the AlGaN cap layer thickness (∼20nm) to within ∼1% or ∼0.2nm precision. This was verified by postprocess x-ray reflectance measurement, which produced a thickness map over the 2in. wafer and yielded an average thickness for the AlGaN cap layer for comparison to the real-time mass spectrometry. These results demonstrate an opportunity for advanced process control based on real-time in situ chemical sensing, with the promise of major benefit in reproducibility and cost reduction in AlGaN∕GaN-based semiconductor manufacturing.

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In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

Abstract: Articles you may be interested inMetalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Cited by 5 publications

References 46 publications

Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

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