I-V relationship for the Cu2S/CdS solar cell

Abstract

The ’’diode’’ equation, which describes the behavior of the Cu2S/CdS solar cell, was derived from the first principles. The key results are the independence of the Voc from the field in CdS and an explanation of the intersection of the dark and illuminated portions of the I-V curves. The limiting factors and correlation with experimental results are discussed.

Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection

“…As previously mentioned, in the case of nanowires, this value is significantly lower than the conduction band offset predicted by the Anderson model for bulk InAs/Si heterojunction (Δ E c = 0.85 eV) . It is important to note that the conduction band gap offset Δ E c is directly related to fundamental material properties and is assumed to be independent of the light intensity, bias voltage, and the device fabrication process. , This assumption is consistent with the fact that the two sets of data from different devices tested under different incident light intensity (Figure a) have similar intercepts at T = 0 K. Equation also predicts that the slope of V oc versus T increases at higher irradiance (for higher I ph ), as observed experimentally (Figure a).…”

“…The current density is therefore given by I 2 = q p 10 A 2 k T 2 π m 1 * exp true( − q V bi k T true) true[ exp true( q V k T true) − 1 true] = q A 2 k T 2 π m 1 * N v 1 exp true( − E g 1 − Δ E c k T true) true[ exp true( q V k T true) − 1 true] here N v1 is the effective density of states in valence band of p-Si, p 10 = N v1 exp[( E v1 − E F )/ k T ] is the hole concentration in bulk p-Si region beyond the depletion region at equilibrium, m 1 * is the effective mass of holes, k is the Boltzmann’s constant, and V is the applied voltage. The interface recombination current I 3 is given by the relation ,, …”

Noble-metal-free Cu2S-modified photocatalysts for enhanced photocatalytic hydrogen production by forming nanoscale p–n junction structure

“…9b. 24,43 When Cu 2 S/CdS hybrid photocatalysts were irradiated with visible light, the photoexcited electrons and holes would be both obtained in CdS and Cu 2 S. As a result of the built-in electric eld, the photogenerated electrons in the CB of Cu 2 S would diffuse into the CB of CdS through the p-n junction, giving rise to the accumulation of photogenerated electrons in the CdS nanocrystal. Likewise, the photogenerated holes in the VB of CdS would diffuse into the VB of Cu 2 S, leading to the accumulation of photogenerated holes in the Cu 2 S nanoparticle.…”