2014
DOI: 10.1103/revmodphys.86.1189
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Colloquium: Emergent properties in plane view: Strong correlations at oxide interfaces

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Cited by 253 publications
(250 citation statements)
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References 235 publications
(315 reference statements)
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“…For example, electrostatic tuning of a high-mobility electron liquid in graphene allows one to select the regime of carrier density when the flow of electrons becomes viscous, whereas electric conductance can exceed the limits of ballistic transport 39 . Oxide heterostructures have also enabled the stabilization of interesting electronic phases at the interfaces of dissimilar oxides 40 or via interactions with the substrate. A recent example of the former is the implementation of a polar metal: a novel form of a conducting material with a static microscopic polarization at equilibrium 41 .…”
Section: Nature Materials Doi: 101038/nmat5017mentioning
confidence: 99%
“…For example, electrostatic tuning of a high-mobility electron liquid in graphene allows one to select the regime of carrier density when the flow of electrons becomes viscous, whereas electric conductance can exceed the limits of ballistic transport 39 . Oxide heterostructures have also enabled the stabilization of interesting electronic phases at the interfaces of dissimilar oxides 40 or via interactions with the substrate. A recent example of the former is the implementation of a polar metal: a novel form of a conducting material with a static microscopic polarization at equilibrium 41 .…”
Section: Nature Materials Doi: 101038/nmat5017mentioning
confidence: 99%
“…Toward this goal, ultra-thin heterostructures composed of two or more structurally, chemically, and electronically dissimilar constituent oxides have been developed into a powerful approach over the past decade. [1][2][3][4][5][6] The main notion here is that at the interface where the dissimilarities meet, the frustration caused by mismatches between arrangement of atoms, charges, orbitals, or spins can trigger the emergence of phenomena with electronic and magnetic structures markedly different from the corresponding bulk compositions. [1] As a result, the interface engineering (IE) has opened a route to novel material behaviors by means of those mismatches as the control parameters.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7] Due to recent advances in atomic level synthesis technique, interface engineering [8][9][10][11][12][13] of oxides has emerged as a useful approach to explore and fine tune their functional properties. Because manipulating the interface is often associated with the added structural distortions, it is crucial to understand how the interfacial modification affects not only the structural but also the physical properties of entire constituent oxide layers.…”
mentioning
confidence: 99%