<i>Carrier Scattering in Metals and Semiconductors</i>

Gantmakher, V. F.; Levinson, Y.; Grinberg, A. A.; Luryi, Serge

doi:10.1063/1.2811285

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“…(1) due to g-factor difference between the dot and the right contact. The mechanism generating such transitions is similar to that of spin scattering by nonmagnetic impurities in semiconductors [5]. Due to spin-orbit interaction, relatively strong in the right con-tact in our case, the orbital and spin states of the electron in the right reservoir are mixed, resulting in effective gfactors for the electrons there to be different from 2.…”

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confidence: 80%

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confidence: 81%

“…Therefore the tunneling matrix elements, corresponding to the transitions from the resonant level to the right reservoir without spin flip, are Ω rss = 1/2m d S · (φ * ∇u r − u r ∇φ * ), and the matrix elements of transitions accompanied by spin flips are Ω rss = 1/2m d S · (φ * ∇v r − v r ∇φ * ); s ≡ −s. For relatively small deviations of g factor in the right reservoir from 2, |v| ∼ O(|∆gu|), ∆g = g − 2 [5], and so the two transition amplitudes are related as |Ω rss | ∼ O(|∆gΩ rss |). For ∆g > 1, the two components u r and v r are of the same order of magnitude and so Ω rss ∼ Ω rss .…”

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Interference effects in resonant magnetotransport

et al. 2002

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We study non-equilibrium magneto-transport through a single electron transistor or an impurity. We find that due to spin-flip transitions, generated by the spin-orbit interaction, the spectral density of the tunneling current fluctuations develops a distinct peak at the frequency of Zeeman splitting. This mechanism explains modulation in the tunneling current at the Larmor frequency observed in scanning tunneling microscope (STM) experiments and can be utilized as a detector for single spin measurement. In the present work we demonstrate that the spectral density of current fluctuations of a single electron transistor in the external magnetic field develops a peak at the electron Zeeman frequency generated by spin-orbit interactions. We attribute such effect to the interference between the spin up and spin down components of the transmitted current resulting from the spin flips in the tunneling process. PACSAs a model system we consider a heterostructure (for example Si/Ge) schematically shown in Fig. 1. The two regions, to the right and to the left from the dotted line denoting the interface, have different g-factors, g 1 ≈ 2 for the left region and g 2 = 2 for the right region. There are two contacts/Fermi reservoirs in each of the regions. The left region also contains a quantum dot, so that when a potential difference V is applied between the two reservoirs, electrons can tunnel from left to the right reservoirs via the dot. The energy levels of the dot are spin-split by an external magnetic field. In this case the spin-orbit coupling causes the spin-flip transitions resulting in coherent effects in the tunneling current [4]. We describe our system by the Hamiltonian H = H L + H R + H S + H C + H T where the first two terms represent the unperturbed states of two contacts, H L = l,s ǫ ls a † ls a ls and H R = r,s ǫ rs a † rs a rs , where a † ls (a † rs ) creates a fermion/electron at the energy level ǫ l (ǫ r ) and with spin s in the left (right) reservoir. We assume that there is a single discrete level in the dot due to spatial quantization. The level is spin-split by the magnetic field B, so that the states in the dot are described by H S = s ǫ sns , wheren s = a † s a s , and a † s creates an electron in the dot at the level ǫ s with spin s. We denote ǫ −1/2 − ǫ 1/2 = gβB ≡ E, Fig. 1, where g is the electronic g-factor in the dot and β is Bohr's magneton. The term H C = s U 2n sn−s corresponds to the Coulomb charging energy for the electron in the well. In what follows we will assume the case of complete Coulomb blockade, i.e., U → ∞, thus allowing for only one electron to occupy the two spin states in the dot. The tunneling transitions between the left reservoir, the dot and the right reservoir are represented by the Hamiltonian:Here we use gauge in which tunneling amplitudes Ω l and Ω rss ′ are real. As we noted above the key point of our work is that we consider the tunneling transitions accompanied by spin flips . These are generated by the second term in Eq. (1) due to g-factor difference between th...

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Interference effects in resonant magnetotransport

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“…The hole-hole scattering, that determines the temperature dependence of the magnetoresistance at different magnitudes of uniaxial compression, does not reflect subband splitting directly. However, it is known that h-h (e-e) scattering in one-type carrier systems does not contribute to resistivity 8 . In accordance with this, in rectangular QW's, where subband splitting is not expected, positive magnetoresistance is almost negligible 1 .…”

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“…The remaining parameters of the model were evaluated from the expressions for the high-field saturation value of ρ xx : 8) and the zero-field value:…”

Section: Application Of Hole-hole Scattering Modelmentioning

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Positive magnetoresistance and hole-hole scattering inGaAs/Al0.5
Kravchenko
¹
,
Minina
²
,
Savin
³

et al. 1999
Phys. Rev. B
11
0
1
0
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Peltier Effect in Semiconductors

Gurevich

Pérez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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In recent years, devices based on the Peltier effect, which is the basis for solid‐state thermoelectric cooling, have evolved rapidly to meet the fast‐growing electronic industry. The Peltier effect corresponds to the heat extraction or absorption occurring at the contact between two different conducting media when a direct current (DC) electric current flows through this contact. A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The thermoelectric cooling in n ‐ n , p ‐ p , and p ‐ n junction contacts, as well as inhomogeneous bulk semiconductors, are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination and nonequilibrium charge carriers in the contact cooling (heating) effect is discussed. Along with the above, special attention is paid to several aspects of nonequilibrium thermodynamics of thermoelectric phenomena involved in Peltier effect in semiconductors that demand a careful examination. The formulation of an adequate self‐consistent theoretical model describing the Peltier effect is also presented.

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Carrier Scattering in Metals and Semiconductors

Abstract: Das Buch wendet sich an Theoretiker wie auch Experimentatoren, die auf dem Gebiet der Festkfirperphysik arbeiten. E s kann aber auch Physik-Studenten der hoheren Studienjahre mit der Spezialisierungsrichtung FestkGrperphysik empfohlen werden.nT. JOHN

Cited by 228 publications

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Interference effects in resonant magnetotransport

Interference effects in resonant magnetotransport

Positive magnetoresistance and hole-hole scattering inGaAs/Al0.5
Kravchenko
¹
,
Minina
²
,
Savin
³

et al. 1999
Phys. Rev. B
11
0
1
0
View full text Add to dashboard Cite

Peltier Effect in Semiconductors

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Carrier Scattering in Metals and Semiconductors

Abstract: Das Buch wendet sich an Theoretiker wie auch Experimentatoren, die auf dem Gebiet der Festkfirperphysik arbeiten. E s kann aber auch Physik-Studenten der hoheren Studienjahre mit der Spezialisierungsrichtung FestkGrperphysik empfohlen werden.nT. JOHN

Cited by 228 publications

References 0 publications

Interference effects in resonant magnetotransport

Interference effects in resonant magnetotransport

Positive magnetoresistance and hole-hole scattering inGaAs/Al0.5Kravchenko1, Minina2, Savin3 et al. 1999Phys. Rev. B11010View full textAdd to dashboardCite

Peltier Effect in Semiconductors

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Positive magnetoresistance and hole-hole scattering inGaAs/Al0.5
Kravchenko
¹
,
Minina
²
,
Savin
³

et al. 1999
Phys. Rev. B
11
0
1
0
View full text Add to dashboard Cite