@In this paper, we report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 m-n to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. Our emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage Si02. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments ( CzF& CHF3, C4F8 ), the fluxes of VUV photons to the wafer varied fi'om 1 x 1015 to 3 x 1015photons/cm2sec or equivalently from 1.5 to 5 mW/cm2. These measurements imply that O.10/0to 0.3 0/0 of the rf source power to these discharges ends up hitting the wafer as VUV photons for our typical 20 mT, 200 W rf discharges. For typical "ashing" discharges containing pure oxygen, the VUV intensities are slightly higher -about 8 mW/cm2 . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/1 0/1 Omixture of Ad C2F~H2yielding VUV fluxes on the wafer 26 mW/cm2 and pure argon discharges yielding 52 mWlcm2 . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.