Abstract:Using configuration-state-constrained electronic structure calculations based on the generalized gradient approximation plus Hubbard U method, we sought the origin of the giant tetragonal ferroelectric distortion in the ambient phase of the potentially multiferroic material BiCoO3 and identified the nature of the pressure induced spin-state transition. Our results show that a strong Bi-O covalency drives the giant ferroelectric distortion, which is further stabilized by an xy-type orbital ordering of the high-… Show more
“…Taking into account the strong Coulomb repulsion ( U ) between the localized d states of Fe, we choose the GGA+ U approach to describe the correlation effects in transition metal oxides. In the present work, the GGA+ U approach described by Dudarev et al was applied , where an effective Hubbard parameter U eff = U – J is 4 eV for Fe atom .…”
Based on first-principles spin-polarized density functional theory calculations, the relative stability, electronic structures, and magnetic properties of B-, C-, N-, and F-doped BiFeO 3 are investigated. The substitution of B, C, N, and F for O produces a magnetic moment of 3.0, 2.0, 1.0, and 1.0 m B per dopant, respectively. The net magnetic moments are from the broken of the symmetry of the AFM spin ordering network. We find that the BiFeO 3 with one O atom substituted by a C atom leads to a ferrimagnetic half-metallic property with a C-type spin alignment. The B-and N-doped BiFeO 3 are ferrimagnetic semiconductors, and ordered an A-type and a G-type spin alignment, respectively. As for F-doped case, system becomes metallic in its G-type spin alignment. Our study demonstrates that the nonmagnetic elements doping is an efficient route to tune magnetic and electronic properties in BiFeO 3 .
“…Taking into account the strong Coulomb repulsion ( U ) between the localized d states of Fe, we choose the GGA+ U approach to describe the correlation effects in transition metal oxides. In the present work, the GGA+ U approach described by Dudarev et al was applied , where an effective Hubbard parameter U eff = U – J is 4 eV for Fe atom .…”
Based on first-principles spin-polarized density functional theory calculations, the relative stability, electronic structures, and magnetic properties of B-, C-, N-, and F-doped BiFeO 3 are investigated. The substitution of B, C, N, and F for O produces a magnetic moment of 3.0, 2.0, 1.0, and 1.0 m B per dopant, respectively. The net magnetic moments are from the broken of the symmetry of the AFM spin ordering network. We find that the BiFeO 3 with one O atom substituted by a C atom leads to a ferrimagnetic half-metallic property with a C-type spin alignment. The B-and N-doped BiFeO 3 are ferrimagnetic semiconductors, and ordered an A-type and a G-type spin alignment, respectively. As for F-doped case, system becomes metallic in its G-type spin alignment. Our study demonstrates that the nonmagnetic elements doping is an efficient route to tune magnetic and electronic properties in BiFeO 3 .
“…The XAS study by Sudayama et al . revealed that the strong Bi–O covalency results in smaller crystal field splitting than that in Sr 2 CoO 3 Cl isostructural with Sr 2 CoO 3 F404142, which could be expected from the larger distance between the Co cation and the CoO 4 basal plane for BiCoO 3 ( D = 0.74 Å) than those for Sr 2 CoO 3 Cl ( D = 0.33 Å) and Sr 2 CoO 3 F ( D = 0.25 Å). In Sr 2 CoO 3 F, it is likely that the primarily weak interaction between the Co and F ions and the relatively small distortion of CoO 5 pyramid facilitate the gradual and complete spin state change from the HS state to the LS state.…”
Section: Resultsmentioning
confidence: 90%
“…However, in comparison with coordination complexes adopting rich variety of ligands, the selectivity of ligands is highly restricted in metal oxides. In fact, the approach frequently employed is cation substitution that indirectly distorts octahedral symmetry, as in 6-coordinated Pr 0.5 Ca 0.5 CoO 3 1516 and 5-coordinated BiCoO 3 1718. In this context, the study on the effect of anion substitution on spin state changes is of value for further understanding the chemistry of Co(III) cation.…”
We report a novel pressure-driven spin crossover in layered cobalt oxyfluoride Sr2CoO3F with a distorted CoO5 square pyramid loosely bound with a fluoride ion. Upon increasing pressure, the spin state of the Co(III) cation gradually changes from a high spin state (S = 2) to a low spin state (S = 0) accompanied by a anomalously large volume contraction (bulk modulus, 76.8(5) GPa). The spin state change occurs on the CoO5 pyramid in a wide pressure range, but the concomitant gradual shrinkage of the Co–F bond length with pressure gives rise to a polyhedral transformation to the CoO5F octahedron without a structural phase transition, leading to the full conversion to the LS state at 12 GPa. The present results provide new effective strategy to fine-tune electronic properties of mixed anion systems by controlling the covalency in metal-ligand bonds under pressure.
“…For example, the moment of the case with 4% in-plane strain is about 4.8 μB, which is almost twice larger than the case with 4% out-of-plane strain. The change in magnetic moment is usually related to the different d electrons occupation, which have been found that strains can change the d electrons occupation31. To show this is indeed the case.…”
The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications.
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