<i>Ab Initio</i>
 Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Aull, T.; Şaşıoğlu, E.; Hinsche, N. F.; Mertig, Ingrid

doi:10.1103/physrevapplied.18.034024

Cited by 5 publications

(1 citation statement)

References 89 publications

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“…It comprises an insulating barrier layer situated between two ferromagnetic metal layers [5,6]. The tunneling magnetoresistance (TMR) ratio of MTJ, critical switching current density of magnetization, power consumption, and other features are all strongly related to the ferromagnetic layer type and structure, as well as the preparation procedure [7,8]. The best options for ferromagnetic layers are soft magnetic materials with high saturation magnetization (Ms) strength, high Curie temperature (Tc), low coercivity (Hc), high permeability (µ), and low magnetostriction (λ s ) in order to achieve magnetization reversal at a low energy cost.…”

Section: Introductionmentioning

confidence: 99%

The Relationship between Annealing Temperatures and Surface Roughness in Shaping the Physical Characteristics of Co40Fe40B10Dy10 Thin Films

Fern,

Liu,

Chiang

et al. 2023

Coatings

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Co40Fe40B10Dy10 thin films, with thicknesses varying between 10 nm and 50 nm, were grown on a Si(100) substrate. Subsequently, they underwent a 1 h annealing process in an Ar atmosphere at temperatures of 100 °C, 200 °C, and 300 °C. The oxide characteristic peaks of Dy2O3(440), Co2O3(422), and Co2O3(511) were revealed by X-ray diffraction (XRD). The low-frequency alternating current magnetic susceptibility (χac) decreases with frequency. Due to thickness and the anisotropy of the magnetic crystal, the maximum χac and saturation magnetization values rise with thicknesses and annealing temperatures. As the thickness and heat treatment temperature rise, the values for resistivity and sheet resistance tend to fall. The results of atomic force microscopy (AFM) and magnetic force microscopy (MFM) show that average roughness (Ra) lowers as the annealing temperature increases, and the distribution of strip-like magnetic domain becomes more visible. As thickness and annealing temperature increase, there is a corresponding rise in surface energy. Nano-indentation testing shows that hardness initially decreases from 10 nm to 40 nm, followed by an increase at 50 nm. Notably, annealing at 300 °C leads to a significant hardening effect, marking the highest level of hardness observed. Young’s modulus increased as thicknesses and annealing temperatures increased. The magnetic, electric, and adhesive characteristics of CoFeBDy films are highly dependent on surface roughness at various annealing temperatures.

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Section: Introductionmentioning

confidence: 99%

The Relationship between Annealing Temperatures and Surface Roughness in Shaping the Physical Characteristics of Co40Fe40B10Dy10 Thin Films

Fern,

Liu,

Chiang

et al. 2023

Coatings

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Spin Gapless Quantum Materials and Devices

Nadeem,

Wang

2024

Advanced Materials

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Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figure out and close this gap. In this review, spin gapless quantum materials, featured by fully spin‐polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two‐band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors are reviewed.

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The Physical Properties of the Half-Heusler MnCoBi Compound: DFT and Monte Carlo Studies

Benyoussef,

Jabar,

Bahmad

2023

J Inorg Organomet Polym

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Ab Initio Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Cited by 5 publications

References 89 publications

The Relationship between Annealing Temperatures and Surface Roughness in Shaping the Physical Characteristics of Co40Fe40B10Dy10 Thin Films

The Relationship between Annealing Temperatures and Surface Roughness in Shaping the Physical Characteristics of Co40Fe40B10Dy10 Thin Films

Spin Gapless Quantum Materials and Devices

The Physical Properties of the Half-Heusler MnCoBi Compound: DFT and Monte Carlo Studies

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