Reduction in the dimensionality of materials may eliminate the symmetric centers and break the inversion symmetry, [1-5] resulting in piezoelectricity of 2D monolayers, where the mechanical energy is converted into electrical energy and vice versa. Recently, the functional application of 2D piezoelectric materials has been exploited in the field of sensors, [6,7] actuators, [8,9] and energy harvesters. [10,11] Although it has been reported from theoretical calculations that numerous 2D materials, [12,13] such as phosphorene-type α-phase SnSe and SbAs, [14,15] exhibit high intrinsic in-plane piezoelectric d 11 coefficients comparable with d 33 coefficient of bulk lead zirconium titanate (360 pm V À1), [16] thus far, only a few studies have explored the strong intrinsic out-of-plane piezoelectricity of 2D materials, which can be characterized by a high coefficient d 31. Blonsky et al. examined III-V monolayers possessing a 2D hexagonal structure and predicted that the buckled GaP and AlAs exhibit d 31 coefficients of 0.31 and 0.57 pm V À1. [17] In addition, Janus group-III chalcogenide monolayers of GaInS 2 and GaInSe 2 were found to show nonzero d 31 coefficients of 0.38 and 0.46 pm V À1 , respectively. [18] Indeed, in the practical applications of 2D piezoelectric materials, especially in free-standing states, out-of-plane piezoelectricity is more meaningful and should be explored urgently. Recently, a series of lamellar metal chalcogen-diphosphates