Hysteretic magnetism–dielectricity switching in 2D Hofmann type spin-crossover compounds
Nian-Tao Yao,
Meng-Jia Shang,
Han-Han Lu
et al.
Abstract:Manipulations of hysteretic magnetism-dielectricity switching in molecular materials are essential for future switching and memory devices. While examples showing simultaneous and wide hysteretic magnetism-dielectricity transition are still rare. In this...
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