Hysteresis-reversible MoS₂ transistor

Abstract

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...

Modulate the Interfacial Oxygen Vacancy for High Performance MoS2 Photosensing−Memory Device

“…[31,32] Since there is no screening to passivate the intrinsic vacancy in BMN, the oxygen vacancy is the dominant contributor to the hysteresis. [28,33,34] The oxygen vacancy at MoS 2 /BMN interface act as the charge trap. [16,23,35] In the BMN-like oxide film, the formation energy of the oxygen vacancy is 1.95 eV and the energy barrier for oxygen vacancy to migrate from one state to the other is ≈0.76 eV.…”

“…In the absence of light, only gate-induced electrical stress can stimulate the part of the vacancy and make it move along the interface, resulting in the movement of the trapped electrons. [28,33,47] The transfer of the oxygen vacancy and the electrons between the electrodes make contributions to the I ds , while a great deal of electrons still remain dormant in the vacancy at the interface of BMN and MoS 2 . With the introduc-tion of the light pump, the trapped electrons absorb energy from the photons and are excited.…”

“…Theoretically, the dielectric constant of BMN (ε = 145–170) is much larger than that of SiO 2 (ε = 3.9). [ 33 ] However, the effective capacitance of BMN/SiO 2 actually is almost totally dominated by the SiO 2 layer. Therefore, this BMN interface provides the platform to introduce more oxygen vacancy as well as maintain the capacity behavior and thus will increase the photoresponse effect.…”

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 vdW Heterojunction

“…The similar hysteresis loops can be attributed to the water molecules, oxide charge trapping, and surface charge trapping functioning as adsorbents. [34][35][36] Thus, to reduce the influence of these uncertainties, the measurement was performed in a vacuum environment at 1.8 × 10 −5 mbar. Furthermore, a 180°change in the piezoresponse phase (see Figure S7, Supporting Information) was observed owing to the reversal of the outof-plane (OOP) polarization of In 2 Se 3 under an external electric field.…”

Ion-modulated photoluminescence of MoS2 nanoflakes for cell viability detection

“…13 Furthermore, 2D MoS 2 nanoflakes with nanoscale lateral dimensions can produce strong fluorescence under ultraviolet light excitation due to the quantum confinement effect. 14 Therefore, 2D MoS 2 nanoflakes possess great potential for developing high-performance optical devices such as solar cells, 15,16 optical sensors, 17 chemical sensing 18,19 and light-emitting diodes. 20,21 However, the applications of PL modulation of MoS 2 in biosensing have not been fully investigated.…”