Hysteresis proves that the In/Si(111)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>(</mml:mo><mml:mn>8</mml:mn><mml:mo>×</mml:mo><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>to<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>phase transition is first-order

Klasing, F.; Frigge, T.; Hafke, B.; Krenzer, B.; Wall, Simone; Hanisch-Blicharski, Anja; Hoegen, M. Horn‐von

doi:10.1103/physrevb.89.121107

Cited by 26 publications

(39 citation statements)

References 30 publications

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“…The hysteretic changes showed little differences when the cooling and heating speeds were varied from 0.5-2 K min −1 . This observation agrees well with a previous study reporting the hysteresis in the 4 × 1-to-8 × 2 transition and thus proving that the transition was first-order [27]. Figure 1(b) further shows that similar hysteresis is also observable for the 4× spots as the intensity is changed conversely to the superstructure diffraction [28].…”

Section: Experimentalssupporting

confidence: 92%

“…On the other hand, there are a number of experimental findings in favor of the first-order nature of the phase transition [12,21,25]. Recently, observations of the long-lived electronically excited 4 × 1 phase at 20 K [26] and the thermal hysteresis in the transition [27] have shown the existence of an energy barrier inherent to the firstorder transition. Therefore, this transition is expected to reveal interesting phenomena pertinent to the firstorder transition, such as supercooling and homogeneous/inhomogeneous nucleations.…”

Section: Introductionmentioning

confidence: 99%

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Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

et al. 2015

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Homogeneous and heterogeneous nucleations in a reduced-dimensional system undergoing a firstorder structural phase transition were examined by using low electron energy diffraction and scanning tunneling microscopy. The high-temperature 4 × 1 phase of a Si(111)-In surface was supercooled at temperatures below the transition temperature (T c ) and evolved slowly into a low-temperature 8 × 2 phase with time. The transition rate decreased significantly as the temperature approached T c . The kinetics of the observed homogeneous nucleation was analyzed by classical nucleation theory. The introduction of oxygen atoms reduced the hysteresis and accelerated nucleation significantly, showing that the T c -raising oxygen impurity plays the role of a nucleation seed for heterogeneous nucleation.

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Section: Experimentalssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

et al. 2015

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“…Upon heating, a first-order insulator-to-metal transition is observed at about 125 K (Refs. 22 and 33–35) where the In atoms rearrange to metallic zig-zag chains with (4 × 1) periodicity.…”

Section: Atomic Wire System Si(111)(8 × 2) ↔ (4 × 1)-inmentioning

confidence: 99%

Non-equilibrium lattice dynamics of one-dimensional In chains on Si(111) upon ultrafast optical excitation

Frigge

Hafke

Witte

et al. 2018

Structural Dynamics

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The photoinduced structural dynamics of the atomic wire system on the Si(111)-In surface has been studied by ultrafast electron diffraction in reflection geometry. Upon intense fs-laser excitation, this system can be driven in around 1 ps from the insulating false(8×2false) reconstructed low temperature phase to a metastable metallic false(4×1false) reconstructed high temperature phase. Subsequent to the structural transition, the surface heats up on a 6 times slower timescale as determined from a transient Debye-Waller analysis of the diffraction spots. From a comparison with the structural response of the high temperature false(4×1false) phase, we conclude that electron-phonon coupling is responsible for the slow energy transfer from the excited electron system to the lattice. The significant difference in timescales is evidence that the photoinduced structural transition is non-thermally driven.

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“…From the assumption (5) follows that the hopping terms t j alternate between two values and thus we can compute the single-particle eigenstates of the electronic Hamiltonian (3) exactly. The single-electron eigenenergies are given by ε s (k) = s2t 0 cos 2 (ka) + δ 2 sin 2 (ka) (12) with the band index s = ±1 and the wave number k = 2πz/(La) for integers −L/4 < z ≤ L/4, which implies k ∈ (−π/(2a), π/(2a)]. We see in Fig.…”

Section: B Dimerizationmentioning

confidence: 98%

“…Recent experimental evidence and first-principles simulations for In/Si(111) suggest that the metallic uniform state remains metastable below the critical temperature and that the transition is first order in this system [9][10][11][12][13][14][15][16]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Grand-canonical Peierls theory for atomic wires on substrates

Ergün

Jeckelmann

2020

Phys. Rev. B

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We present a generic grand-canonical theory for the Peierls transition in atomic wires deposited on semiconducting substrates such as In/Si(111) using a mean-field solution of the one-dimensional Su-Schrieffer-Heeger model. We show that this simple low-energy effective model for atomic wires can explain naturally the occurrence of a first-order Peierls transition between a uniform metallic phase at high-temperature and a dimerized insulating phase at low temperature as well as the existence of a metastable uniform state below the critical temperature.

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Hysteresis proves that the In/Si(111)(8×2)to(4×1)phase transition is first-order

Cited by 26 publications

References 30 publications

Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

Non-equilibrium lattice dynamics of one-dimensional In chains on Si(111) upon ultrafast optical excitation

Grand-canonical Peierls theory for atomic wires on substrates

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