Hysteresis Effect in Two‐Dimensional Bi<sub>2</sub>Te<sub>3</sub> Nanoplate Field‐Effect Transistors

Liu, Junliang; Pan, Wenwu; Wang, Han; Zhang, Zekai; Zhang, Songqing; Yuan, Guang; Yuan, C. L.; Ren, Yuchen; Lei, Wen

doi:10.1002/aelm.202000851

Cited by 9 publications

(3 citation statements)

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“…When the V g was swept from −50 to 50 V, the mobility (μ) of BTS flake was calculated by the equation [14]: where L and W are the length and width of the device, C is the capacitance of 300 nm SiO 2 equal to 11.57 nF cm −1 [14]. The field-effect mobility of BTS flake was calculated to be 0.736 cm 2 V −1 s −1 , which was relatively smaller than that of Bi 2 Se 3 [19] and Bi 2 Te 3 [57] due to the low carrier concentration and high resistivity of the 2D BTS flake and the defects introduced in the growing and wet transfer process [52,58]. Finally, we took the near-infrared light (980 nm) as an example to study the gate modulation effect to the performance of BTS photodetector.…”

Section: Articles Science China Materialsmentioning

confidence: 99%

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

et al. 2021

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Two-dimensional (2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi 2 Te 2 Se (BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300 (365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W −1 and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics.

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Section: Articles Science China Materialsmentioning

confidence: 99%

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

et al. 2021

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“…This solution-based method provides good control over the shape and size of Bi 2 Te 3 NPs, affording a viable platform for exploring the practical applications of Bi 2 Te 3 [40][41][42] . For example, the combination of high surface-volume ratio, topological surface conduction, and unique dielectric behavior has endowed Bi 2 Te 3 NPs with significant potential for use in fast logic transistors, efficient thermoelectric catalysis, wide-band photodetectors, and microwave absorbers [43][44][45][46] . Albeit never involving the field of nanogenerators, TIs' unique surface conducting properties make them ideal candidates for TENGs since the triboelectrification is strongly dominated by the surface charge transfer process between tribolayers 47,48 .…”

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confidence: 99%

Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

Wang

et al. 2022

Nat Commun

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Reliable energy modules and higher-sensitivity, higher-density, lower-powered sensing systems are constantly required to develop wearable electronics and the Internet of Things technology. As an emerging technology, triboelectric nanogenerators have been potentially guiding the landscape of sustainable power units and energy-efficient sensors. However, the existing triboelectric series is primarily populated by polymers and rubbers, limiting triboelectric sensing plasticity to some extent owing to their stiff surface electronic structures. To enrich the current triboelectric group, we explore the triboelectric properties of the topological insulator nanofilm by Kelvin probe force microscopy and reveal its relatively positive electrification charging performance. Both the larger surface potential difference and the conductive surface states of the nanofilms synergistically improve the charge transfer behavior between the selected triboelectric media, endowing the topological insulator-based triboelectric nanogenerator with considerable output performance. Besides serving as a wearable power source, the ultra-compact device array demonstrates innovative system-level sensing capabilities, including precise monitoring of dynamic objects and real-time signal control at the human-machine interface. This work fills the blank between topological quantum matters and triboelectric nanogenerators and, more importantly, exploits the significant potential of topological insulator nanofilms for self-powered flexible/wearable electronics and scalable sensing technologies.

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“…The ultra-clean or vacuum environment is required to address this challenge; (c) high surface-to-volume ratio and surface passivation issue. 2D materials and their heterostructures present a high surface-to-volume ratio, and thus surface passivation presents a significant influence on the final device performance, especially for electronic devices [212]. However, surface passivation of 2D materials-based devices is little researched, which should be strengthened in the future to achieve better device performance; (d) low light absorption.…”

Section: Challenges and Opportunities Of 2d Heterostructure-based Fun...mentioning

confidence: 99%

Two-dimensional heterostructures and their device applications: progress, challenges and opportunities—review

Zhang

Liu

Kirchner

et al. 2021

J. Phys. D: Appl. Phys.

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This work presents a review on the current progress, challenges, and potential future development opportunities for two-dimensional material-based heterostructures, including their fabrication techniques as well as their applications in various functional devices. The fabrication techniques for two-dimensional material-based vertical heterostructure are first reviewed and discussed, including artificial stacking, chemical vapor deposition, molecular beam epitaxy, and others. Then, twodimensional material-based lateral heterostructure growth techniques are reviewed, including chemical vapor deposition and others. Subsequently, various functional device applications based on twodimensional material-based heterostructures are systematically reviewed and discussed, including electronic devices, optoelectronic devices, electrochemical devices, and others. The advantages and disadvantages for each fabrication/growth technique are compared and analyzed, including those for both vertical and lateral heterostructures. In addition, the current primary challenges for further development of two-dimensional material-based heterostructures and their functional devices are discussed and analyzed, including lack of precise control, low interface/surface quality, surface passivation issue, low light absorption, lack of system integration and application, complex device fabrication process, as well as low device fabrication efficiency. Various potential solutions are proposed that have the potential to overcome these existing primary challenges to achieve better device performance and thus their ultimate industry applications for the two-dimensional material-based heterostructures.

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Cited by 9 publications

References 35 publications

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

Two-dimensional heterostructures and their device applications: progress, challenges and opportunities—review

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Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors

Cited by 9 publications

References 35 publications

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

Ultrathin 2D ternary Bi2Te2Se flakes for fast-response photodetectors with gate-tunable responsivity

Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

Two-dimensional heterostructures and their device applications: progress, challenges and opportunities—review

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors