11th International Conference on Group IV Photonics (GFP) 2014
DOI: 10.1109/group4.2014.6962014
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Hyperuniform disordered photonic band gap devices for silicon photonics

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“…[20,33] In 2014, Man and co-workers demonstrated a HUDS with a PBG of about 100 nm in the near-infrared (near-IR) band on a silicon-on-insulator (SOI) wafer, with an average lattice constant of 499 nm and a network wall width of 150 nm. [34] However, the generation of large-size and high-quality HUDS structures with numerous points, which provides high hyperuniformity, low losses, and large PBGs, is still time-consuming.…”
Section: Introductionmentioning
confidence: 99%
“…[20,33] In 2014, Man and co-workers demonstrated a HUDS with a PBG of about 100 nm in the near-infrared (near-IR) band on a silicon-on-insulator (SOI) wafer, with an average lattice constant of 499 nm and a network wall width of 150 nm. [34] However, the generation of large-size and high-quality HUDS structures with numerous points, which provides high hyperuniformity, low losses, and large PBGs, is still time-consuming.…”
Section: Introductionmentioning
confidence: 99%