Hyperspectral laser beam induced current system for solar cell characterization

Ashraf, Ali; Davis, Kristopher O.; Ogutman, Kortan; Schoenfeld, Winston V.; Eisaman, Matthew D.

doi:10.1109/pvsc.2015.7356129

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…The group used tunable Ti:Sapphire laser and utilized the most suitable wavelength for the OBIC investigation (~810 nm) that provided better contrast of the photocurrent generated in the ring with minimum influence from the central region of the structure. Similarly, Ashraf et al, studied the time‐averaged performance parameters of solar cells by using a hyperspectral LBIC system based on a wavelength tunable supercontinuum laser (repetition rate: 20 MHz; pulse width: 6 ps) (Ashraf et al, 2015). Most recently, vertical‐cavity surface‐emitting laser (VCSEL) diodes were studied using ultrafast tuneable laser source (Ti:sapphire femtosecond laser tuned from 780 to 900 nm) based spectrally resolved OBIC imaging system to investigate electrostatic discharge (ESD) induced damages in such devices (Hsu et al, 2021).…”

Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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Laser scanning optical beam induced current (OBIC) microscopy has become a powerful and nondestructive alternative to other complicated methods like electron beam induced current (EBIC) microscopy, for high resolution defect analysis of electronic devices. OBIC is based on the generation of electron–hole pairs in the sample due to the raster scanning of a focused laser beam with energy equal or greater than the band gap energy and synchronized detection of resultant current profile with respect to the beam positions. OBIC is particularly suitable to localize defect sites caused by metal–semiconductor interdiffusion or electrostatic discharge (ESD). OBIC signals, thus, are capable of revealing the parameters/factors directly related to the reliability and efficiency of the electronic device under test (DUT). In this review, the basic principles of OBIC microscopy strategies and their notable applications in semiconductor device characterization are elucidated. An overview on the developments of OBIC microscopy is also presented. Specifically, the recent progresses on the following three OBIC measurement strategies have been reviewed, which include continuous laser based single photon OBIC, pulsed laser based single photon OBIC, and multiphoton OBIC microscopy for three‐dimensional mapping of photocurrent response of electronic devices at high spatiotemporal resolution. Challenges and future prospects of OBIC in characterizing complex electronic devices are also discussed. Highlights Characterization of electronic device quality is of paramount importance. Optical beam induced current (OBIC) microscopy offers spatially resolved mapping of local electronic properties. This review presents the principle and notable applications of OBIC microscopy.

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Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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“…Some of the modern inspection methods include vision systems and defect imaging, the end result of which is an image that is subject to further analysis. Decisions are often made using automatic detection systems that apply artificial intelligence [1][2][3]. These include, among others, infrared imaging methods [4], electroluminescence imaging [5], or photoluminescence imaging [6].…”

Section: Introductionmentioning

confidence: 99%

Imaging methods of detecting defects in photovoltaic solar cells and modules: a survey

Maziuk,

Jasińska,

Domaradzki

et al. 2023

Metrology and Measurement Systems

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In pursuit of increased efficiency and longer operating times of photovoltaic systems, one may encounter numerous difficulties in the form of defects that occur in both individual solar cells and whole modules. The causes of the occurrence range from structural defects to damage during assembly or, finally, wear and tear of the material due to operation. This article provides an overview of modern imaging methods used to detect various types of defects found in photovoltaic cells and panels. The first part reviews typical defects. The second part of the paper reviews imaging methods with examples of the authors' own test results. The article concludes with recommendations and tables that provide a kind of comprehensive guide to the methods described, depending on the type of defects detected, the range of applicability, etc. The authors also shared their speculations on current trends and the possible path for further development and research in the field of solar cell defect analysis using imaging.

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Hyperspectral laser beam induced current system for solar cell characterization

Cited by 2 publications

References 6 publications

An insight into optical beam induced current microscopy: Concepts and applications

An insight into optical beam induced current microscopy: Concepts and applications

Imaging methods of detecting defects in photovoltaic solar cells and modules: a survey

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