Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Camenzind, Leon C.; Yu, Liuqi; Stano, Peter; Zimmerman, Jeramy D.; Gossard, A. C.; Loss, Daniel; Zumbühl, Dominik M.

doi:10.1038/s41467-018-05879-x

Cited by 72 publications

(68 citation statements)

References 52 publications

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“…At long timescales the valley relaxation of localized holes can be related with (i) two phonon processes [78][79][80], (ii) single phonon processes in combination with the hyperfine interaction [81], or (iii) mixing of the energy degenerate states by the localization potential [82][83][84]. In the latter case, the localization potential should be atomically sharp, e.g.…”

Section: Discussionmentioning

confidence: 99%

Hyperfine interaction in atomically thin transition metal dichalcogenides

Avdeev

Smirnov

2019

Nanoscale Adv.

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Localization of charge carriers in monolayers (MLs) of transition metal dichalcogenides (TMDs) dramatically increases spin and valley coherence times, and, by analogy with other systems, the role of the hyperfine interaction should enhance. We perform theoretical analysis of the intervalley hyperfine interaction in TMD MLs based on the group representation theory. We demonstrate, that the spin-valley locking leads to the helical structure of the in-plane hyperfine interaction. In the upper valence band the hyperfine interaction is shown to be of the Ising type, which can be used for fabrication of the atomically thin quantum dots with the long spin and valley coherence times.

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Section: Discussionmentioning

confidence: 99%

Hyperfine interaction in atomically thin transition metal dichalcogenides

Avdeev

Smirnov

2019

Nanoscale Adv.

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“…The information on the quantum dot shape thus acquired was essential for the experimental quantification of the spin-orbit couplings in Ref. 24, further demonstrating the power of this tool.…”

Section: Introductionmentioning

confidence: 88%

g -factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field

et al. 2018

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We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a gated quantum dot based in a two-dimensional electron gas. Starting with a k·p Hamiltonian, we perturbatively calculate these effects for the conduction band of GaAs, up to the third power of the magnetic field. We quantify several corrections to the g-tensor and reveal their relative importance. We find that for typical parameters, the Rashba spin-orbit term and the isotropic term, H43 ∝ P 2 B · σ, give the largest contributions in magnitude. The in-plane anisotropy of the g-factor is, on the other hand, dominated by the Dresselhaus spin-orbit term. At zero magnetic field, the total correction to the g-factor is typically 5-10% of its bulk value. In strong in-plane magnetic fields, the corrections are modified appreciably. arXiv:1808.03963v2 [cond-mat.mes-hall] 4 Dec 2018 3 We stick here to the triangular heterostructure confinement in Eq. (4) and do not discuss in the main text, for the sake of brevity, other confinement types considered in Ref. 22. We give results for a symmetric confinement in App. D. 4 The corrections resulting from such terms are expected to be much smaller than the terms denoted gz (see below), which are of similar origin and which are subdominant.

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“…Namely, as the direction of the external magnetic field can be experimentally well controlled, these effects can reveal the quantum dot orientation within the 2DEG plane, as well as its size in all three directions. 9 This, so far missing, spectroscopic tool is essential for a quantitative assessment of, for example, the spin-orbit fields, 10 or the hyperfine electron-nuclear interaction, and the related limits on the spin relaxation, 11,12 dephasing, 13 or measurement fidelities. 14 To illustrate the power of these tools, we use them here to fit the strengths of the spin-orbit interactions in a GaAs quantum dot.…”

Section: Introductionmentioning

confidence: 99%

Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot

et al. 2019

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We theoretically investigate the orbital effects of an in-plane magnetic field on the spectrum of a quantum dot embedded in a two-dimensional electron gas (2DEG). We derive an effective twodimensional Hamiltonian where these effects enter in proportion to the flux penetrating the 2DEG. We quantify the latter in detail for harmonic, triangular, and square potential of the heterostructure. We show how the orbital effects allow one to extract a wealth of information, for example, on the heterostructure interface, the quantum dot size and orientation, and the spin-orbit fields. We illustrate the formalism by extracting this information from recent measured data [L. C. Camenzind, et al., arXiv:1804.00162; Nat. Commun. 9, 3454 (2018)]. arXiv:1804.00128v2 [cond-mat.mes-hall]

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Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Cited by 72 publications

References 52 publications

Hyperfine interaction in atomically thin transition metal dichalcogenides

Hyperfine interaction in atomically thin transition metal dichalcogenides

g -factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field

Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot

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