“…These are summarized in Table 2, arranged by the type of material and the general physical phenomenon considered. [60] • In in Zr 2 Rh [61] • In in HfAl 2 & ZrAl 2 [62] • In in Pd 3 Ga 7 [65] • In in Ni 2 Al 3 & related [66] • In in (Hf/Zr) 3 Al 2 & (Hf/Zr) 4 Al 3 [68] • In & Hf in bixbyites [63,64,67] • Hf in LiNbO 3 & LiTaO 3 [72] Probe:defect complex configurations [26] • Cd:acceptor and Cd:V Te charge states in CdTe [71] • Cd:vacancy in II-VI compounds [13] • Cd:acceptor in III-Vs, Si, and Ge [11,85,86] • In:V O in CeO 2 [69] • In:V O in CoO [70] • In:V O in CeO 2 [87] Probe:defect interactions • In:V Ni in NiAl [73] • In:V Fe in FeAl [26] • In:V Sm in SmNi 2 [75] • Probe:solute pairs in metals [4] • In:vacancy pairs in metals [9,[78][79][80][81] • In:V Cd in CdTe [74] • In:V Cd in CdS [76] • Pd:V Si in Si [77] • Cd:H in III-V compounds [11] • Cd:acceptors in Si & Ge [11] • Cd:V O in ZrO 2 [112] Atomic jumps • H near Hf in Y [94], Hf [95], & DyH 2±δ [96] • H near Cd in HfV 2 H x [98] • V R near Cd in R 1-x Ni 2 [75] • Cd in β-Mn ...…”