Hyperfine interaction and channeling studies of impurities implanted in silicon

Waard, H. de; Kemerink, G. J.

doi:10.1016/0378-4363(83)90249-8

Cited by 10 publications

(5 citation statements)

References 23 publications

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“…A stressrelief annealing of 4 h at 350 • C in a nitrogen atmosphere, with a warming up and cooling down period of 1.5 days each, increased the Q to 14 000. The quality factor measurements were done by exciting the resonant modes of the sphere with a piezoelectric crystal, glued onto the sphere with cyanoacrylate instant glue and measuring the relaxation time t [5]. The mechanical quality factor is then determined by Q = πτf 0 , where τ is the relaxation time and f 0 the resonant frequency.…”

Section: Mechanical Quality Factormentioning

confidence: 99%

MiniGRAIL progress report 2001: the first cooldown

Waard¹,

Gottardi²,

Frossati³

2002

Class. Quantum Grav.

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The results of the first cooldown of MiniGRAIL are presented. MiniGRAIL is a 65 cm diameter spherical gravitational wave detector made of CuAl6%, having a mass of 1150 kg. The sphere is suspended from a seven-stage vibration isolation system with a total weight of about 950 kg. The sphere should be cooled to below 20 mK. During the first run the sphere was cooled down to 1.8 K. A forced helium flow was used to cool the sphere down to 4 K, which took only two days. Further cooling to 1.8 K was done using a 1 K pot. We measured the temperature dependence of the mechanical quality factor and made an evaluation of the heat leaks (for more details see www.minigrail.nl).

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Section: Mechanical Quality Factormentioning

confidence: 99%

MiniGRAIL progress report 2001: the first cooldown

Waard¹,

Gottardi²,

Frossati³

2002

Class. Quantum Grav.

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“…More detailed results to the semiconductor problematics gave the investigations of the Groningen-group in Si [20,21]. » 9 Sn, i«Sb, 125 Te and «'I were used as probes.…”

Section: The Mocssbaucr-cffcct In the Investigation Of Implanted Semimentioning

confidence: 99%

“…Naturally, In has not the technical importance of Fe but it fits well into the semiconductor problematics (for instance In is a shallow acceptor in Si and a host atom for many AlUHV-compoumls). [20] (please note the mistake in [2G] the material was 0.2 n cm n-Si not 100 n cm p-Si). For the asimplanted samples a broad distribution of quadrupole frequencies dominate whereby the most probable frequency is zero (fast decay of A 2 G 2 (0)-Only a very small part of probes finds environments which are weakly disturbed (slow decay of AiG t (0).…”

Section: The Mocssbaucr-cffcct In the Investigation Of Implanted Semimentioning

confidence: 99%

Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods

Unterricker

1989

Isotopenpraxis Isotopes in Environmental and Health Studies

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“…In other studies laser annealing has been used following the ion implantation of a specific atom impurity into another substance. These studies include Fe in Si (172), Te in GaAs, GaSb, GaP, and InP (324), and Sb, Te, and I in Ge and Si (67,72,68). There have been many papers published which involve ion implantation during the last 2 years.…”

Section: Miscellaneous Applicationsmentioning

confidence: 99%