2021
DOI: 10.1016/j.apcatb.2021.120276
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Hydrothermally obtained type-Ⅱ heterojunction nanostructures of In2S3 / TiO2 for remarkably enhanced photoelectrochemical water splitting

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Cited by 110 publications
(33 citation statements)
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“…normalNnormalD=1.41×1032false(cm×normalF2×normalV1false)εr×normalA2false(cm4false)×slopefalse(normalF2×normalV1false)where N D represents the carrier concentration, εr is dielectric constant of semiconductor (for ZnIn 2 S 4 , 4.7 [ 54 ] ), slope is the slope of M–S curve, and A is the area of the working electrode. [ 55 ] In addition, since the amount of NiS is relatively small, its effect on the dielectric constant is negligible. As shown in Figure 9 a, the slope of M–S curve is 1.15 × 10 12 for pure flower ball–like ZnIn 2 S 4 and 1.65 × 10 11 for ZnIn 2 S 4 –2%NiS composite photocatalyst.…”
Section: Resultsmentioning
confidence: 99%
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“…normalNnormalD=1.41×1032false(cm×normalF2×normalV1false)εr×normalA2false(cm4false)×slopefalse(normalF2×normalV1false)where N D represents the carrier concentration, εr is dielectric constant of semiconductor (for ZnIn 2 S 4 , 4.7 [ 54 ] ), slope is the slope of M–S curve, and A is the area of the working electrode. [ 55 ] In addition, since the amount of NiS is relatively small, its effect on the dielectric constant is negligible. As shown in Figure 9 a, the slope of M–S curve is 1.15 × 10 12 for pure flower ball–like ZnIn 2 S 4 and 1.65 × 10 11 for ZnIn 2 S 4 –2%NiS composite photocatalyst.…”
Section: Resultsmentioning
confidence: 99%
“…The flat band potentials of pure ZnIn 2 S 4 was tested by the Mott-Schottky plot. [54,55] As shown in Figure S4, Supporting Information, the flat band potentials of ZnIn 2 S 4 was À1.17 eV (versus Ag/AgCl), which the conduction band (CB) is converted to À1.07 V (versus normal hydrogen electrode (NHE)). [58] The valence band (VB) of ZnIn 2 S 4 is calculated by an empirical formula E CB ¼ E VB À E g .…”
Section: Photocatalytic Co 2 Reduction Mechanismmentioning
confidence: 99%
“…The study of CdS and other materials showed that although the construction of semiconductor heterojunctions can promote the bulk separation of photogenerated carriers and greatly improve the device performance, heterojunctions are difficult to construct with metal sulfides. Because of their narrow Eg and the position of their energy band, sulfides often need to be used as the outer layer material of the heterojunction (i.e., the part in contact with the electrolyte) [170]. This energy band structure leads to a large accumulation of photogenerated holes on the surface of metal sulfides, resulting in increasingly serious photocorrosion.…”
Section: In2s3mentioning
confidence: 99%
“…102 Defect engineering and heterojunction to enhance light harvesting of TiO 2 with a large band gap of 3.2 eV have been mainly used. 103,104 In addition, since TiO 2 can be easily synthesized by the hydrothermal method that can make excellent crystallinity, many efforts have been made to control the crystal facet with high photoactivity. 105–107 As shown in Fig.…”
Section: Trends Of Facet and Phase Engineering For Water Splitting Sy...mentioning
confidence: 99%