Hydrothermally grown boron-doped ZnO nanorods for various applications: Structural, optical, and electrical properties

Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Ji, Iksoo; Kim, Young-Gyu; Kim, Ikhyun; Park, Youngbin; Kang, Daeho; Leem, Jae‐Young

doi:10.1007/s13391-013-3130-2

Cited by 18 publications

(9 citation statements)

References 42 publications

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“…There are many articles reporting enhancements of physical properties from doping ZnO 1D‐NSs, such as increased conductivity, increased ferromagnetic properties, increased transparency, or a reduced work function . It is well known that most appropriate dopant materials for the n‐type doping of ZnO 1D‐NSs are found in group III (i.e., boron (B), aluminium (Al), gallium (Ga) and indium (In)).…”

Section: Introductionmentioning

confidence: 99%

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Hsu

Chang

2014

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In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.

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Section: Introductionmentioning

confidence: 99%

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Hsu

Chang

2014

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176

140

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“…are generally introduced effective dopants. [51][52][53][54][55][56][57][58] Electrical properties of TCO films are largely affected by both the dopant and nanostructures. In this regard, it is important to understand the electronic structures of doped ZnO to obtain proper physical characteristics.…”

Section: Understanding Electrical Properties Of Sputter-deposited Znomentioning

confidence: 99%

Recent advances in the transparent conducting ZnO for thin-film Si solar cells

Moon

Shin

Park

2015

Electron. Mater. Lett.

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The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnObased transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article.

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“…많은 화합물 반도체 중에서 ZnO는 육방정 형태 의 우르짜이트 결정구조를 가지고 있으며, 넓은 밴 드갭(3.37 eV)과 높은 엑시톤 결합 에너지(60 meV) 를 가지고 있어 높은 기계적 강도, 그리고 화학적 및 열적으로 우수한 안정성을 가지고 있다 1,2) . 또한 ZnO는 극성 결정을 가지고 있는 물질로써 (002) 결 정면에서 높은 표면 에너지를 가지기 때문에 나노 막대, 나노선, 나노튜브, 나노링 등의 저차원 ZnO 나노구조의 성장이 용이하다 3) .…”

Section: 서 론unclassified

Effects of Precursor Concentration and Current on Properties of ZnO Nanorod Grown by Electrodeposition Method

Park¹,

Nam²,

Park³

et al. 2014

Journal of the Korean institute of surface engineering

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Abstract:ZnO nanorods have been deposited on ITO glass by electrodeposition method. The optimization of two process parameters (precursor concentration and current) has been studied in order to control the orientation, morphology, and optical property of the ZnO nanorods. The structural and optical properties of ZnO nanorods were systematically investigated by using field-emission scanning electron microscopy, X-ray diffractometer, and photoluminescence. Commonly, the results show that ZnO nanorods with a hexagonal form and wurtzite crystal structure have a c-axis orientation and higher intensity for the ZnO (002) diffraction peaks. Both high precursor concentration and high electrodeposition current cause the increase in nanorods diameter and coverage ratio. ZnO nanorods show a strong UV (3.28 eV) and a weak visible (1.9~2.4 eV) bands.

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Hydrothermally grown boron-doped ZnO nanorods for various applications: Structural, optical, and electrical properties

Cited by 18 publications

References 42 publications

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Recent advances in the transparent conducting ZnO for thin-film Si solar cells

Effects of Precursor Concentration and Current on Properties of ZnO Nanorod Grown by Electrodeposition Method

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