2017
DOI: 10.1186/s11671-017-2233-3
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Hydrothermal synthesis of In2O3 nanoparticles hybrid twins hexagonal disk ZnO heterostructures for enhanced photocatalytic activities and stability

Abstract: In2O3 nanoparticles hybrid twins hexagonal disk (THD) ZnO with different ratios were fabricated by a hydrothermal method. The as-obtained ZnO/In2O3 composites are constituted by hexagonal disks ZnO with diameters of about 1 μm and In2O3 nanoparticles with sizes of about 20–50 nm. With the increase of In2O3 content in ZnO/In2O3 composites, the absorption band edges of samples shifted from UV to visible light region. Compared with pure ZnO, the ZnO/In2O3 composites show enhanced photocatalytic activities for deg… Show more

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Cited by 58 publications
(24 citation statements)
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“…The DPE intensity in Co 3 O 4 and Co 3 O 4 /ZnO-35 heterostructures is much lower than in ZnO, which indicates that the recombination of the photo-generated charge carriers is harder in Co 3 O 4 and Co 3 O 4 /ZnO-35 heterostructures than in ZnO. It has also been demonstrated that the recombination efficiency of photo-induced electron-hole pairs in ZnO can be effectively inhibited by the modification of In 2 O 3 for the formation of heterojunction structure [ 56 ]. The DPE of Co 3 O 4 /ZnO-35 is little higher than pure Co 3 O 4 , and ZnO amount has no regular effect on the recombination rate of photo-generated charge carriers in Co 3 O 4 /ZnO heterostructures, which may be caused by the small quantity of ZnO and the increasing of defect concentration at the Co 3 O 4 /ZnO interface.…”
Section: Resultsmentioning
confidence: 99%
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“…The DPE intensity in Co 3 O 4 and Co 3 O 4 /ZnO-35 heterostructures is much lower than in ZnO, which indicates that the recombination of the photo-generated charge carriers is harder in Co 3 O 4 and Co 3 O 4 /ZnO-35 heterostructures than in ZnO. It has also been demonstrated that the recombination efficiency of photo-induced electron-hole pairs in ZnO can be effectively inhibited by the modification of In 2 O 3 for the formation of heterojunction structure [ 56 ]. The DPE of Co 3 O 4 /ZnO-35 is little higher than pure Co 3 O 4 , and ZnO amount has no regular effect on the recombination rate of photo-generated charge carriers in Co 3 O 4 /ZnO heterostructures, which may be caused by the small quantity of ZnO and the increasing of defect concentration at the Co 3 O 4 /ZnO interface.…”
Section: Resultsmentioning
confidence: 99%
“…As illustrated in Fig. 15 , the valence bands (VB) of Co 3 O 4 and ZnO are 2.44 V/SHE [ 60 ] and 3.03 V/SHE [ 56 ], respectively. And the conduction bands (CB) of Co 3 O 4 and ZnO are 0.37 V/SHE [ 60 ] and − 0.15 V/SHE [ 56 ], respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…The development of oxide semiconductor photocatalysts for environmental remediation has been widely studied. 1–3 Zinc oxide (ZnO) has received global research interest for application as a highly efficient photocatalyst. However, low quantum efficiency, short-range disorder, and photocorrosion continue to affect the performance of ZnO in practical applications.…”
Section: Introductionmentioning
confidence: 99%
“…The spectrum of S1HT for the In 3d 3/2 could be deconvoluted into one peak reflecting the oxidation state of indium. For the sample S1HT the position U 0 * = 451.82 eV and the spin-orbit doublet 3d 5/2 at U 0 = 444.21 eV were assigned to In 3+ such as in In 3 Ti 2 AlO 10 [28][29][30][31][32]. A similar value of the peak mentioned before was reported by Detweiler et al [33] they found the binding energy of the oxidized species (In 3+ ) at 444.8 eV and related values by Jiayong Gan et al were found for the In 3d and its spin-orbit doublet attributed to In 3+ in the main product.…”
Section: In 3d Spectramentioning
confidence: 99%