Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications

Terry, Rylan J.; Combs, Nick; McMillen, Colin D.; Stemmer, Susanne; Kolis, Joseph W.

doi:10.1016/j.jcrysgro.2020.125529

Cited by 13 publications

(9 citation statements)

References 28 publications

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“…30. Overall, the measured values are also in agreement with most reported experimental values that are about ∼3.0 [31,33] and 3.5 eV [24,29,38] for the onset of the indirect and direct transitions, respectively. Note that both values are not fundamental band gaps as the spectra include excitonic effects.…”

Section: B Eels Measurementssupporting

confidence: 91%

“…Detailed knowledge of the pristine material is prerequisite for the fundamental understanding of its doped or nanostructured counterparts and, consequently, for developing such promising applications. In the last years, the electronic and optical properties of BaSnO 3 have been intensively investigated from both theory and experiment [4,12,15,[21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. However, effective masses, band gaps, and absorption edge are still controversial.…”

Section: Introductionmentioning

confidence: 99%

“…While, the value of the fundamental gap is under debate, there is evidence of its indirect character, obtained by angle-resolved photoemission spectroscopy [38] and absorption measurements [30]. Measured values [4,[21][22][23][24][25][26][27][28][29][30][31][32][33] for the indirect fundamental gap vary between 2.85 and 3.3 eV, while for the direct counterpart between 3.1 and 4 eV, with a majority of the latter being around 3.5 eV. The corresponding estimates of the difference between the two range between 0.15 eV and 0.5 eV.…”

Section: Introductionmentioning

confidence: 99%

“…These diverse findings were assigned to the presence of uncontrolled defects as well as to differences in measurement techniques. Also the experimental estimates of the effective electron mass are scattered, ranging between 0.19 and 0.65 m 0 [4,11,26,33,39].…”

Section: Introductionmentioning

confidence: 99%

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A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Aggoune,

Eljarrat,

Nabok

et al. 2021

Preprint

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Section: B Eels Measurementssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Aggoune,

Eljarrat,

Nabok

et al. 2021

Preprint

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“…SrTiO 3 and BaSnO 3 have been well characterized, and recently, also large-size single BaSnO 3 crystals could be grown from the melt 28 and hydrothermal methods. 29 In contrast, up to present, the cubic perovskite SrGeO 3 (Fig. 1a) has remained widely unexplored due to the difficulty in the synthesis, requiring high-pressure conditions.…”

Section: Introductionmentioning

confidence: 99%

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3

et al. 2020

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Cubic perovskite oxides are emerging high mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO 3 . 0.5 × 0.4 × 0.2 mm 3 large single crystals of the cubic SrGeO 3 perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility in the order of 3.9×10 2 cm 2 V -1 s -1 is obtained, identifying cubic SrGeO 3 as one of the most promising TCOs.Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO 3 , BaSnO 3 and SrTiO 3 is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.

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Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface

Pfützenreuter

Kim

Cho

et al. 2022

Adv Materials Inter

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temperature mobility of 320 cm 2 V −1 s −1 at a carrier density of 8.0 × 10 19 cm −3 in a bulk single crystal. [8] Furthermore, BaSnO 3 is a transparent wide bandgap semiconductor with a bandgap of 3.1 eV, which makes it suitable for high power applications like field effect transistors (FET). [9] To exploit the full potential of a FET, a 2D electron gas (2DEG) with high carrier density and mobility is highly desirable. The formation of a 2DEG at the LaInO 3 /BaSnO 3 interface was found and studied experimentally by Kim et al. in 2016 and thereafter [10,11] and has been theoretically investigated using several models. [12][13][14] Analysis of the Seebeck coefficient as well as Poisson-Schrödinger simulations suggested a thickness of ≈1 nm for the 2DEG. [14] Recently, another similar polar interface, namely LaScO 3 /BaSnO 3 , has been investigated. [15,16] In this paper we report on the epitaxial growth of LaInO 3 / BaSnO 3 heterointerfaces using a SrSnO 3 buffer layer on NdScO 3 substrates. We provide clear evidence for the enhancement of the conductance at the LaInO 3 /BaSnO 3 interface for a compensated BaSnO 3 :La channel layer. More importantly, we report on the length scale of the charge accumulation at the heterointerface and with that further support the finding of a 2DEG at the heterointerface. We also present the low temperature electrical properties of the heterointerface, displaying reduced carrier density and increased mobility Results and Discussion Structural Properties of the HeterostructureA high-resolution X-ray diffraction (HRXRD) 2θ−ω scan around the (220) NdScO 3 Bragg reflection shows three contributions, which can be attributed to the BaSnO 3 and SrSnO 3 films as well as to the NdScO 3 substrate (see Figure 1a). The SrSnO 3 film peak appears at 44.7°, which corresponds to a vertical lattice parameter of 4.056 Å. This coincides with the expected vertical lattice parameter of a fully compressively strained film, which is obtained from linear elasticity theory under the assumption of a Poisson ratio of ν = 0.23 and a lattice mismatch of 0.5% in [1-10] direction and 0.8% in [001] direction of the NdScO 3 substrate. [17] An reciprocal space mappings (RSM) measurement (Figure 1c) in the vicinity of the asymmetric (332) NdScO 3 substrate reflection exhibits the SrSnO 3 contribution directly belowThe properties of the conductance at the LaInO 3 /BaSnO 3 heterointerface are reported. The heterointerface is formed by covering the semi-insulating BaSnO 3 :La thin films with 10 nm LaInO 3 films, which are all epitaxially grown on NdScO 3 substrates. Structural properties of BaSnO 3 thin films are investigated by means of X-ray diffraction and transmission electron microscopy and exhibit a threading dislocation density of 6 × 10 10 cm −2 . Via capacitance-voltage (C-V) measurements, clear evidence is present for the accumulation of electrons at the interface within 2.5 nm in the BaSnO 3 layer, confirming the formation of a 2D electron gas (2DEG). Additionally, temperature dependent Hall effect measurem...

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Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications

Cited by 13 publications

References 28 publications

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3

Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface

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Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications

Cited by 13 publications

References 28 publications

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3

Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface

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Confinement of Electrons at the LaInO₃/BaSnO₃ Heterointerface