2015
DOI: 10.1016/j.spmi.2014.12.036
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Hydrostatic pressure effects on the electronic, optical, and photocatalytic properties of ribbon-like Bi2S3: A DFT study

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Cited by 34 publications
(23 citation statements)
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“…In previous researches, it has been reported that for Bi2Fe4O9 the calculated band gap using GGA-PBE method is close to experimental values ~1.91-2.13 eV 12,14,26,33 and is narrower than Bi2Al4O9 and Bi2Ga4O9. As can be seen from proportional to the mobility of photo-generated carriers 35 . Consequently, a low effective mass promotes the migration and suppresses the recombination of carriers.…”
Section: Resultsmentioning
confidence: 99%
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“…In previous researches, it has been reported that for Bi2Fe4O9 the calculated band gap using GGA-PBE method is close to experimental values ~1.91-2.13 eV 12,14,26,33 and is narrower than Bi2Al4O9 and Bi2Ga4O9. As can be seen from proportional to the mobility of photo-generated carriers 35 . Consequently, a low effective mass promotes the migration and suppresses the recombination of carriers.…”
Section: Resultsmentioning
confidence: 99%
“…However, it should be mentioned that production of electron-hole pairs in a direct band gap semiconductor is easy but in the indirect band gap semiconductors electron must interacts with photon to gain energy, and with lattice vibration (phonon) to gain or lose momentum. On the other hand recombination of photo-generated carriers is much more efficient for direct than for indirect band gap semiconductors 35 . Light sensitivity of Bi2Al4O9 and Bi2Ga4O9 can be described by optical properties.…”
Section: Resultsmentioning
confidence: 99%
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“…where ω is the light frequency [47]. The calculated 1 ε ω ( ) and 2 ε ω ( ) for AgInS 2 based on B3LYP approach are presented in Fig.…”
mentioning
confidence: 99%