Hydrostatic pressure effect on the structural parameters of GaSb semiconducting material: Ab-initio calculations

Bengasmia, Farouk; Bengasmia, Ammar; Boutahar, Lotfi; Rekab-Djabri, Hamza; Daoud, Salah

doi:10.58452/jpcr.v1i2.24

Cited by 5 publications

(4 citation statements)

References 33 publications

(59 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The melting point Tm of solids correlates with their elastic constants [19,20]. We note that the melting point Tm of several solids having a cubic structure correlates with the bulk modulus B by this empirical formula: Tm = 9.3B + 607, where Tm is expressed in K, and B is expressed in GPa [17,19]. Using the previous expression, the melting point Tm of K2TlAsCl6 and K2TlAsBr6 semiconducting materials were found to be 830 K and 796 K, respectively.…”

Section: Introductionmentioning

confidence: 75%

“…The mass density ρ of material is related to the atomic arrangement and corresponding electron density. The gravimetric density ρ can be calculated as follows: ρ = ZM/NAV [16,17], where Z is the number of molecules per unit cell, M is the molecular weight, NA is the Avogadro constant, and V is the unit cell volume. The acoustic impedance (Z) has been analyzed by the following equation: Z = (ρG)1/2 [18], where G and ρ refer to the shear modulus and compound density, respectively.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Some physical properties of K2TlAsX6 (X = Cl, Br) and CsPbBr3 semiconducting compounds

Bioud

2024

IJAC

View full text Add to dashboard Cite

Some physical properties of K2TlAsX6 (X = Cl, Br) double perovskite compounds have been predicted using the theoretical unit cell parameters and elastic constants computed by Munir et al. (Materials Science and Engineering B 298 (2023) 116830). At equilibrium the Debye temperatures of K2TlAsCl6 and K2TlAsBr6 materials were found to be 193.5 K and 159.6 K, respectively. Furthermore, the mass density, the longitudinal, transverse and mean acoustic wave speeds, the acoustic impedance and the Debye temperature of Cesium Lead Bromide (CsPbBr3) inorganic perovskite compound under high stress up to 15 GPa have been predicted using the theoretical unit cell parameters and elastic constants computed by Junaid Zaidi et al. (Materials Research Express, Vol. 9, No. 12, (2022) 125501). To the best of our knowledge, there is no any data in the literature that can be compared to the findings we’ve achieved on the Debye temperature of K2TlAsX6 (X = Cl, Br) and CsPbBr3 materials.

show abstract

Section: Introductionmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Some physical properties of K2TlAsX6 (X = Cl, Br) and CsPbBr3 semiconducting compounds

Bioud

2024

IJAC

View full text Add to dashboard Cite

show abstract

“…It is well know that the Diamond is the hardest material on earth having HV in the range of 70 -150 GPa [53]. The values of HV for ceramics are very smaller than that of the diamond, and higher than that (3.57 GPa) of GaSb [54].…”

Section: Theory and Discussion Of The Resultsmentioning

confidence: 98%

Quasi-linear correlation between shear and young’s moduli in some polycrystalline ceramics

Daoud,

Saini,

Rekab-Djabri

2024

IJPR

View full text Add to dashboard Cite

This work aims to investigate the correlation between the shear modulus and the Young’s modulus of some pore-free polycrystalline ceram-ics. Our study shows that the shear modulus correlates quasi-linearly with the Young’s modulus. The best fit was obtained using the linear model. The fit of the shear modulus G as a function of the Young modulus E obeys this linear expression: G = 0.43E - 7.7 (where both G and E are expressed in GPa). The coefficient of the correlation was found at around 0.994. Our expression was used to predict the shear modulus G of some other polycrystalline ceramics, especially: Dy2O3, Er2O3, and Y2O3 materials, which are estimated at around 65.6, 72.4, and 51.8 GPa, respectively. We attempt also to estimate the Vickers hardness of our materials of interest using an empirical expression of the literature. Unfortunately our predicted results are larger than those reported previously in the literature.

show abstract

“…Because of their technical and scientific importance for optoelectronic device applications, recently A N B 8-N tetrahedrally coordinated semiconducting materials have been extensively studied [1][2][3][4][5][6][7][8][9][10][11][12][13]. When several possible atomic configurations are considered, the solid crystallizes in a modification that maximizes the number of atoms in a given volume [2].…”

Section: Introductionmentioning

confidence: 99%

Plasmon energy and microhardness of BxAl1-xSb alloys: semi-empirical prediction

Mezouar

Logzit²

2023

IJPR

View full text Add to dashboard Cite

Based on the reflective index reported in the literature, the present work aims to investigate the plasmon energy, the microhardness and the homopolar band gap energy of BxAl1-xSb ternary semiconducting alloys as a function of boron concentration x in the range 0 –1. We found that both the plasmon energy and the microhardness of BxAl1-xSb alloys change gradually but not monotonically with increasing of boron concentration x from 0 to 1, while the homopolar band gap energy increases monotonically with enhancing of x. We emphasize that a boron concentration x dependent plasmon energy and microhardness between 0 and 1 is extremely unusual behavior for BxAl1-xSb alloys. Normally, both plasmon energy and the microhardness monotonically increase with increasing boron concentration x as it was mentioned in the literature. The plasmon energy of AlSb and BSb was found to be 16.14 and 15.58 eV, respectively. Our value (16.14 eV) of the plasmon energy for AlSb compound is higher than the result (13.8 eV) reported by Böer and Pohl. The minimum of the plasmon energy was found to be 14.4 eV for both B0.5Al0.5Sb and B0.625Al0.375Sb alloys. The microhardness of AlSb was found at around 7.56 GPa, while that of BSb was found to be 6.51 GPa. Similar to the plasmon energy, the minimum value of the microhardness was found to be 4.45 GPa for both B0.5Al0.5Sb and B0.625Al0.375Sb alloys.

show abstract

Hydrostatic pressure effect on the structural parameters of GaSb semiconducting material: Ab-initio calculations

Cited by 5 publications

References 33 publications

Some physical properties of K2TlAsX6 (X = Cl, Br) and CsPbBr3 semiconducting compounds

Some physical properties of K2TlAsX6 (X = Cl, Br) and CsPbBr3 semiconducting compounds

Quasi-linear correlation between shear and young’s moduli in some polycrystalline ceramics

Plasmon energy and microhardness of BxAl1-xSb alloys: semi-empirical prediction

Contact Info

Product

Resources

About