2015
DOI: 10.1007/s11090-015-9623-z
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Hydrophobic–Hydrophilic Character of Hexamethyldisiloxane Films Polymerized by Atmospheric Pressure Plasma Jet

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Cited by 31 publications
(18 citation statements)
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“…[31,32,50,51] Indeed, Vogelsang et al, [31] in their work on the deposition of C:F coatings using a RF capillary microplasma jet, reported of a maximum coating thickness of 7.8 mm after 3 min of deposition; Chen et al, [32] reporting on the deposition of pPAA coatings with an atmospheric pressure glow discharge plasma jet, observed a thickness of around 300 nm after a 10 min deposition time. Bashir et al, [50] in their work on the polymerization of hexamethyldisiloxane using a DBD plasma jet, reported about an average thickness of the deposited coating of 662 AE 33 nm after a treatment time of 3 min. Finally, Bosso et al [51] observed a maximum thickness of 300 nm for a pPAA coating deposited by means of DBD plasma jet (10 min deposition time).…”
Section: Resultsmentioning
confidence: 99%
“…[31,32,50,51] Indeed, Vogelsang et al, [31] in their work on the deposition of C:F coatings using a RF capillary microplasma jet, reported of a maximum coating thickness of 7.8 mm after 3 min of deposition; Chen et al, [32] reporting on the deposition of pPAA coatings with an atmospheric pressure glow discharge plasma jet, observed a thickness of around 300 nm after a 10 min deposition time. Bashir et al, [50] in their work on the polymerization of hexamethyldisiloxane using a DBD plasma jet, reported about an average thickness of the deposited coating of 662 AE 33 nm after a treatment time of 3 min. Finally, Bosso et al [51] observed a maximum thickness of 300 nm for a pPAA coating deposited by means of DBD plasma jet (10 min deposition time).…”
Section: Resultsmentioning
confidence: 99%
“…The contact angles of two test liquids diiodomethane and deionized (D.I.) water were measured for estimating the parameters of surface free energy …”
Section: Experimental Methodsmentioning
confidence: 99%
“…The annealing is conducted using an oven with air as ambient gas. The annealing of one set of samples is done at 200°C for 2 h and another set at 500°C for [29,30] 928 ν a (Si─N─Si); stretching asymmetric mode [31,32] 1060 ν a (Si─O─Si), ν a (Si─O─C); stretching asymmetric mode [30,33] 1179 δ(N─H) bending mode [32] 1249 δ s (CH 3 ) in Si─CH 3 ; bending symmetric mode [29,33] 1402 δ a (CH 3 ); bending asymmetric mode [29] 2896 ν s (C─H) in CH 3 ; stretching symmetric mode [29,30] 2954 ν a (C─H) in CH 3 ; stretching asymmetric mode [29,30] 3381 ν(N─H); stretching mode [32] HAMDAN ET AL. 3 | RESULTS AND…”
Section: Methodsmentioning
confidence: 99%