Abstract:Keywords: hydrophobic films, drying marks, SiCN, amorphous carbon, chemical oxide growth
Introduction
Integrated circuits manufacturing requires use of hydrophobic materials, as low-k films. Maintaining their integrity during wet cleaning is challenging. Indeed, the aqueous liquid film break-up on these surfaces during the cleaning process can result in undesired drying marks defects [1] which can cause open-circuits and be yield killers by blocking proper patterning. Use of dry-… Show more
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