Hydrogenated Amorphous Silicon Thin Film Solar Cells Using a Hybrid Buffer Layer of Gold Nanoparticle and Tungsten Oxide Thin Film

Dopant-Free Hydrogenated Amorphous Silicon Thin-Film Solar Cells Using Molybdenum Oxide and Lithium Fluoride

“…In comparison, J sc , V oc , FF, and PCE of the reference p-i-n Si device were 13.12 mA/cm 2 , 0.80 V, 0.72, and 7.53%, respectively. 8 It is clear that as T-MoO 3 becomes thinner, J sc increases because of the reduced light absorption in the window layer. It is also better than the J sc values of the reference p-i-n Si device because p-a-Si:H is known to exhibit higher optical absorption.…”

“…The PCE of our previous conventional cells using conventional ptype-intrinsic-n-type (p-i-n) Si layers was 7.53%. 8 The values of V oc , the short-circuit current density (J sc ), and fill factor (FF) of the hybrid cell are 0.65 V, 16.08 mA/cm 2 , and 0.67, respectively. Furthermore, the light stability of the device with MoO 3 /LiF layers is much better than that of the conventional device with the normal p-i-n Si structure.…”

“…Furthermore, from these studies, it is unclear which parameters are the main contributors to the stability degradation. It is well known that the doping elements induce Si dangling bonds and severe stability degradation. − Therefore, the substitution of both doping layers, that is, p -a-Si:H and n -a-Si:H, is a possible strategy for improving the light stability.…”

Effects of Gold-Nanoparticle Surface and Vertical Coverage by Conducting Polymer between Indium Tin Oxide and the Hole Transport Layer on Organic Light-Emitting Diodes

“…IS is an outstanding, nondestructive tool for characterizing various optoelectronic devices, which can reveal charge-carrier lifetimes, electronic densities-of-states, and charge carrier concentrations. 14,15,26,27 Here, device II exhibited a higher interfacial resistance than the other devices, indicating that the PEDOT:PSS single layer was a severe bottleneck causing increased series resistance (R s ) with increased interfacial resistance between the ITO and NPB HTL layer. However, device IV exhibited reduced resistance at the ITO and capping layer interface, which improved its performance.…”

“…As the Au-NP size increased, a red-shift was induced in the UV spectra. [4][5][6][7][8]14,15 In Figure S6(b), the EL intensities of the examined devices were slightly enhanced at approximately 570 nm as the Au-NP size increased. The EL intensities at approximately 570 nm of the devices with small To understand the different current density and luminance behaviors exhibited by the examined devices, extinction crosssectional spectral models were simulated using the finitedifference time-domain (FDTD) method for each of the different device structures.…”