2008
DOI: 10.1109/tns.2008.918519
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Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

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Cited by 20 publications
(42 citation statements)
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“…Here, the crack, followed by a dashed line and appearing as white contrast line, propagates through the whole active part of the i-layer. It is worth stressing that these "cracks" have been observed by different other groups, for different other TCOs or substrates, in µC-Si:H and in aSi:H solar cells [26,27] or particle detectors [28], and that they are determined by the substrate morphology and geometry. Reduction of this low quality material density is therefore crucial for the development of high efficiency thin film silicon solar cells.…”
Section: Impact Of the Substrate Geometry Onto Thin Film Silicon Solamentioning
confidence: 89%
“…Here, the crack, followed by a dashed line and appearing as white contrast line, propagates through the whole active part of the i-layer. It is worth stressing that these "cracks" have been observed by different other groups, for different other TCOs or substrates, in µC-Si:H and in aSi:H solar cells [26,27] or particle detectors [28], and that they are determined by the substrate morphology and geometry. Reduction of this low quality material density is therefore crucial for the development of high efficiency thin film silicon solar cells.…”
Section: Impact Of the Substrate Geometry Onto Thin Film Silicon Solamentioning
confidence: 89%
“…Diodes with an ionized defect density as low as 7×10 14 cm -3 have been obtained [54,56]. However, similar defect densities have also been obtained with hydrogen dilution (and without He) [57]. As an alternative way to reduce the voltage needed for full depletion, Morosanu et al proposed to slightly p-type dope the intrinsic layer.…”
Section: Io Figure 4: Minimum Voltage Necessary To Fully Deplete An Amentioning
confidence: 96%
“…2 were already performed using beta particles [8]. It was demonstrated that almost no cross-tall takes place for microstrips only 4 µm apart and that the lateral collection of the charges generated by the ionizing particles is very short.…”
Section: Tfa Sensors -Microstrip Characterizationmentioning
confidence: 99%
“…Using microstrip pixel geometries, very high spatial resolution can be obtained that are comparable or superior to the ones of stateof-the-art c-Si detectors. A specific test chip was designed in the past by CERN to study the effect of pixel geometry on the performance of TFA sensors [8]. This chip includes pixels of various sizes and shapes, microstrips of various width and pitch values and two different geometries for the openings in the passivation layer of the chip (see Fig.…”
Section: Introductionmentioning
confidence: 99%