Hydrogenated amorphous silicon pixel detectors for minimum ionizing particles

Perez‐Mendez, V.; Kaplan, S.N.; Cho, G.; Fujieda, Ichiro; Qureshi, S.; Ward, W. E.; Street, R. A.

doi:10.1016/0168-9002(88)90807-8

Cited by 47 publications

(13 citation statements)

References 11 publications

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“…This large-area deposition at low temperatures (around 200 °C) has also generated considerable interest in the use of a-Si:H for large-size X-ray imagers for medical applications [1], using thereby a scintillating layer for the conversion of the X-ray photons into visible light. In the field of high-energy physics, several research groups have demonstrated that a-Si:H can be used for particle detection [2][3][4]. Moreover, the high radiation hardness of a-Si:H [5][6][7] is, in this context, an attractive additional feature.…”

Section: Introductionmentioning

confidence: 98%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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PACS 29.40 Wk, 81.05 Gc, 85.60 Bt, Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 µm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been characterized using light pulse illumination and beta particle irradiation from 63 Ni and 90 Sr sources. Direct detection of single lowand high-energy beta particles have been demonstrated. The application of this new integrated particle sensor concept for medical imaging is also discussed.

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Section: Introductionmentioning

confidence: 98%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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“…Thick a-Si:H layers formed into small pixels are essential to provide high signal to noise (SIN) ratio for direct detection of these particles. We have estimated the SIN ratio of the pixel device for some assumed parameters [7].…”

Section: High Energy Physics Applicationsmentioning

confidence: 99%

“…Taking advantage of this existing chip, single-particle-counting strip detectors can be bllilt by wire-bonding each strip to one channel of the chip as shown in Fig.Z(a). A strip or pixel device with the front end electronics made from a-Si:H or poly-Si TFTs on each strip or pi;x:el as shown in Fig.2(b) and (c) has been proposed by us [7] ancj others [15]. In Fig.2(a), the electronics cell is mounted next to the detector strips.…”

Section: Introductionmentioning

confidence: 99%

Applications of a-Si:H radiation detectors

Fujieda

Cho

Kaplan

et al. 1989

Journal of Non-Crystalline Solids

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Devic~ structures and operation principles are described for detecting various kinds of radiation with hydrogenated amorphous silicon (a-Si:H) layers. With some new configurations such as the buried p-i-n structure and the use of interdigitated electrodes, the aSi:H radiation detectors will find their applications in rnany fields of science. Some applications in high energy physics, medical imaging, materials sciences and life sciences are discussed in this paper.

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“…In thin devices, the effects of proton [3][4][5], neutron [6] and photon irradiation have all very similar consequences on material and diode properties: metastable deep defects are created than can be annealed out. The process has been very extensively studied for light-soaking but only few experiments have been carried out in the case of irradiation.…”

Section: Introductionmentioning

confidence: 99%

Radiation hardness of amorphous silicon particle sensors

Wyrsch

Miazza

Dunand

et al. 2006

Journal of Non-Crystalline Solids

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Radiation tests of 32 lm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 · 10 16 protons/cm 2 . The results are compared to irradiation of similar 1 lm and 32 lm thick n-i-p diodes using a proton beam of 405 keV at a fluence of 3 · 10 13 protons/cm 2 . All samples exhibited a drop of the photoconductivity and an increase in the dark leakage current under both high-and low-energy proton irradiation. An almost full recovery of the device performance was observed after a subsequent thermal annealing.

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Hydrogenated amorphous silicon pixel detectors for minimum ionizing particles

Cited by 47 publications

References 11 publications

Thin‐film silicon detectors for particle detection

Thin‐film silicon detectors for particle detection

Applications of a-Si:H radiation detectors

Radiation hardness of amorphous silicon particle sensors

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