Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Mokeddem, Kamel; Aoucher, M.; Smail, Ted Jini

doi:10.1016/j.spmi.2006.07.003

Cited by 10 publications

(9 citation statements)

References 2 publications

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“…On the other hand, sputter-deposition using a ceramic Si 3 N 4 target or a polycrystalline Si target in combination with a nitrogen-rich plasma are also viable alternatives. Typically, a radiofrequency (RF) discharge is applied for synthesis [10][11][12][13][14], but given a sufficient electrical conductivity of the target, direct-current (DC) magnetron sputtering is also a feasible approach [15,16].…”

Section: Introductionmentioning

confidence: 99%

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

et al. 2015

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“…In the case of the deposition of SiNx:H thin films by the introduction of molecular hydrogen to the chamber, control of the hydrogen pressure serves as an alternative technique for tuning the refractive index of the thin films. Mokkedem et al [ 90 ] studied the correlation of the hydrogen gas pressure and the refractive index of DC magnetron sputtered SiNx:H layers. It was revealed that when the partial pressure of H 2 increased from 4.5 to 9 mPa, the refractive index showed a decreasing trend from 1.92 to 1.78.…”

Section: Physical Vapor Depositionmentioning

confidence: 99%

“…The refractive index at 550 nm of the layers decreased from 1.96 to 1.89, while the partial pressure of H 2 was increased from 0 to 7.9 × 10 −4 mbar. These variations of the refractive index should be attributed to the incorporation of H and N atoms into the layers [ 90 ]. Table 2 presents the comparison of the mechanical, thermal, and optical properties of CVD, PVD, and ALD SiNx layers.…”

Section: Physical Vapor Depositionmentioning

confidence: 99%

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Hegedűs

Balázsi

2021

Materials

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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“…Direct current (DC) magnetron sputtering [16], radio frequency (RF) sputtering [17], and high-power impulse magnetron sputtering (HiPIMS) [18] were also proved to be proper methods to produce SiN x :H thin films at a lower substrate temperature. In the case of different sputtering techniques, it is possible to directly control the amount of hydrogen by adjusting the applied hydrogen gas flow.…”

Section: Introductionmentioning

confidence: 99%

Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films

et al. 2021

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In this work, amorphous hydrogen-free silicon nitride (a-SiNx) and amorphous hydrogenated silicon nitride (a-SiNx:H) films were deposited by radio frequency (RF) sputtering applying various amounts of hydrogen gas. Structural and optical properties were investigated as a function of hydrogen concentration. The refractive index of 1.96 was characteristic for hydrogen-free SiNx thin film and with increasing H2 flow it decreased to 1.89. The hydrogenation during the sputtering process affected the porosity of the thin film compared with hydrogen-free SiNx. A higher porosity is consistent with a lower refractive index. Fourier-transform infrared spectroscopy (FTIR) confirmed the presence of 4 at.% of bounded hydrogen, while elastic recoil detection analysis (ERDA) confirmed that 6 at.% hydrogen was incorporated during the growing mechanism. The molecular form of hydrogen was released at a temperature of ~65 °C from the film after annealing, while the blisters with 100 nm diameter were created on the thin film surface. The low activation energy deduced from the Arrhenius method indicated the diffusion of hydrogen molecules.

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Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Cited by 10 publications

References 2 publications

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films

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