Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

A Study on Optical and Electrical Properties of Solar Cells of a-Si_1-XGe_X:H

“…Therefore, the cell with Ge content of x=0.1 is regarded as the optimized result. Recently, C.C.Wang et al [8] investigated the photoelectronic conversion of a-Si 1-x Ge x :H cells by experiment. He found that a germane fraction of 0.11 was to be optimal for solar cell of a-Si 1-x Ge x :H films, which is agreement with our calculations.…”