Hydrogen solubility and network stability in amorphous silicon

Acco, S.; Williamson, D. L.; Stolk, P. A.; Saris, F.W.; Boogaard, M. J. van den; Sinke, W.C.; Weg, W. F. van der; Roorda, S.; Zalm, P. C.

doi:10.1103/physrevb.53.4415

Cited by 80 publications

(67 citation statements)

References 67 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This concentration is about the same, 3%, for which large dose H ϩ implantations in a-Si give rise to structural modifications and the appearance of the 2100 cm Ϫ1 band attributed to Si-H clustering. 17 In a previous paper, we reported that plasma hydrogenation of ion implanted Si to H concentrations exceeding ϳ6% gives rise to the formation of voids in a near subsurface region and the appearance of the 2100 cm Ϫ1 band. 18 Over this [H], the a-Si structure is modified and solid phase crystallization does not occur.…”

Section: Resultsmentioning

confidence: 99%

“…Hydrogen ion implantations to [H] > 3 atom % also gives rise to the 2100 cm Ϫ1 band attributed to Si-H clustering. 17 High density H-plasma exposure, radio frequency (rf) or electron cyclotron resonance (ECR), of amorphized ion implanted Si leads also to the appearance of an additional band at 2080 cm Ϫ1 when [H] > 6 atom % and solid phase epitaxy does not occur when this threshold value is exceeded. 18 Apparently, the presence of H in the plasma, because it is deliberately introduced or because it is released from the fragmented Si precursors, eg., silane, might lead to structural modifications and internal microcavities or voids preventing solid phase crystallization.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas

Holgado

Martinez

Garrido

et al. 1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

Nanocrystalline silicon layers have been deposited by electron cyclotron resonance chemical vapor deposition from silane as precursor. Although hydrogen was not deliberately introduced in the plasma it was incorporated in the grown layers as evidenced by the presence of a main infrared absorption band around 2100 cm Ϫ1 with a shoulder at 2000 cm Ϫ1 . This suggests that most of the hydrogen is bonded to internal surfaces of microcavities instead of isolated Si-H bonds. In the first few hundreds, ϳ500 Å, of deposited layers, the estimated hydrogen concentration is rather low, below 5 atom %, and increases strongly for larger thicknesses. Solid phase crystallization at ϳ1100ЊC occurs in thin layers close to the substrates in which the hydrogen concentration is below a certain critical value of ϳ5 atom %.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas

Holgado

Martinez

Garrido

et al. 1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…16,[21][22][23] In the D diffusion and plasma/monoatomic hydrogen treatment, hydrogen solubility of 1-3% has been observed. 22,24 At such low concentration levels, the weak Si-Si bonds and dangling bonds seem to provide sites for H incorporation without dilation of the silicon network; the solubility depends on the microstructure which, in turn, depends on the deposition conditions for the film. In the ion implantation process, the hydrogen incorporation proceeds simultaneously with defect creation, hence a higher H concentration can be achieved than the initial H concentration.…”

Section: A Tritium Solubilitymentioning

confidence: 99%

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Liu¹,

Chen²,

Kherani³

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Experimental results on tritium effusion, along with the tritium depth profiles, from hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) tritiated in tritium (T2) gas at various temperatures and pressures are presented. The results indicate that tritium incorporation is a function of the material microstructure of the as-grown films, rather than the tritium exposure condition. The highest tritium concentration obtained is for a-Si:H deposited at a substrate temperature of 200°C. The tritium content is about 20 at. % on average with a penetration depth of about 50 nm. In contrast, tritium occluded in the c-Si is about 4 at. % with penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is much higher than the reported results for the post-hydrogenation process. β irradiation appears to catalyze the tritiation process and enhance tritium dissolution in the silicon matrix. The combination of tritium decay and β-induced ionizations results in formation of reactive species of tritium (tritium atoms, radicals, and ions) that readily adsorb on silicon. The electron bombardment of the silicon surface and subsurface renders it chemically active thereby promoting surface adsorption and subsurface diffusion of tritium, thus leading to tritium occlusion in the silicon matrix. Gaussian deconvolution of tritium effusion spectra yields two peaks for a-Si:H films tritiated at high temperature (250°C), one low temperature (LT) peak which is attributed to tritiated clusters and higher order tritides, and another high temperature peak which is attributed to monotritides. Activation energy of 2.6–4.0 eV for the LT peak was found.

show abstract

“…Since it is reported that some of hydrogen implanted in Si at room temperature can be desorbed thermally below 500 K without significant annealing effect on the defects in silicon, 7,10,11) we have made an additional experiment to see the change in the relative reflectance by hydrogen release as follows. After the H þ irradiation with the fluence of 1 Â 10 18 cm À2 , the irradiated silicon sample was gradually heated up to 423 K. After the temperature was reached at 423 K, the change of the relative reflectance was monitored at the fixed temperature at 423 K. Figure 4 shows the changes of the relative reflectance at 370, 500 and 700 nm with heating time.…”

Section: Changes In Optical Reflection Of Siliconmentioning

confidence: 99%

<i>In-Situ</i> Optical Reflection Measurement of a Si(100) Surface under Hydrogen Ion Irradiation

2004

View full text Add to dashboard Cite

In-situ optical reflection measurements have been performed for a Si(100) surface under H þ irradiation to study dynamic change in the electronic structure of the silicon. The relative reflectance at 370 nm decreased almost linearly with displacement per atom (dpa) and was recovered by hydrogen release by 423 K annealing, suggesting that the change in the relative reflectance at 370 nm originates from the increase of hydrogen bonded to Si. With increasing H þ irradiation, the relative reflectance around 700 nm increased due to the formation of Si-H phase near the surface silicon. Furthermore, the broad minima of the relative reflectance shifted from 600 to 500 nm by H þ irradiation, probably correlating with amorphization or appearance of silicon micro/nano-crystal by displacement effect.

show abstract

Hydrogen solubility and network stability in amorphous silicon

Cited by 80 publications

References 67 publications

Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas

Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

<i>In-Situ</i> Optical Reflection Measurement of a Si(100) Surface under Hydrogen Ion Irradiation

Contact Info

Product

Resources

About