2017
DOI: 10.1016/j.snb.2017.03.039
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Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

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Cited by 23 publications
(10 citation statements)
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“…Besides stability, in this domain, a large area of interactions between the sensitive material and gas is desired. In other words, nanostructured porous materials are ideal for obtaining the highest sensitivity for gas sensors because they possess high surface to volume ratio, fast charge diffusion and large penetration depth [1,2].…”
Section: Introductionmentioning
confidence: 99%
“…Besides stability, in this domain, a large area of interactions between the sensitive material and gas is desired. In other words, nanostructured porous materials are ideal for obtaining the highest sensitivity for gas sensors because they possess high surface to volume ratio, fast charge diffusion and large penetration depth [1,2].…”
Section: Introductionmentioning
confidence: 99%
“…Comparison of the Pd thin film/PdNPs hydrogen gas sensors based on the different sensing parameter and different hydrogen concentrations have been shown in Table I. It can be seen in Table I, the response time of PdNPs MOS capacitor is smaller than Pd thin film hydrogen gas senor with voltage, resistance and current sensing parameters (Hassan et al, 2016;Lo et al, 2013;Hu et al, 2013;Duy et al, 2015;Yang et al, 2014;Chen et al, 2017;Ling et al, 2014). For Pd-SnO 2 thin film hydrogen Figure 2 C-V curves for the MOS sensor at the room temperature and 0, 1, 2 and 4 per cent hydrogen concentration gas sensor in temperature range RT-275 8 C, the response time is 1 s (Yang et al, 2014).…”
Section: Resultsmentioning
confidence: 99%
“…2125 We may also note that various sensors based on Schottky diodes operating by the above mechanism or other mechanisms have been reported for a number of applications in both gas–metal and in liquid–metal reactions. 16,2631…”
Section: Introductionmentioning
confidence: 99%
“…An ultrathin metal film is placed on the surface of a semiconductor substrate so that it creates a Schottky contact. At equilibrium, the electrical current through the metal–semiconductor contact is zero because the thermionic emission current flowing through the Schottky contact in the forward and reverse directions is balanced. , However, when a chemical reaction proceeds on the metal surface, the equilibrium can be disturbed by the formation of excess charge, which leads to the appearance of a nonzero electrical current. A number of research papers show that this current is proportional to the reaction rate, which makes nanodiode sensors a convenient tool for studying chemical kinetics on nanoscale metal structures. We may also note that various sensors based on Schottky diodes operating by the above mechanism or other mechanisms have been reported for a number of applications in both gas–metal and in liquid–metal reactions. , …”
Section: Introductionmentioning
confidence: 99%