Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

Chou, Po-Cheng; Chen, Huey Ing; Liu, I-Ping; Chen, Chun Chia; Liou, Jian Kai; Lai, Cheng Jing; Liu, Wen Chau

doi:10.1016/j.ijhydene.2014.10.022

Cited by 7 publications

(3 citation statements)

References 22 publications

(19 reference statements)

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“…Nanostructures, owing to their interesting properties and higher surface to volume ratio, have attracted the attention of many researchers. As reported in thin-film nanostructures [41,108], they can be used effectively as interfacial layers in MOS Schottky diodes. The grains and grain boundaries at the interface can significantly affect the Schottky diode properties.…”

Section: Future Directionsmentioning

confidence: 92%

“…In recent years, conjugated conducting polymers have become popular for optoelectronic applications. Several research reports have focused on modifying the optical and electrical properties of polymers by doping with transition metals, such as Zn, Co, Ni, Cu, and Fe [108][109][110]. Investigations and research are being carried on metal-doped polymer-based Schottky barrier diodes to develop low leakage and electrically superior diodes.…”

Section: Future Directionsmentioning

confidence: 99%

“…Polyvinyl alcohol (PVA) with high dielectric strength (>1000 kV mm −1 ) is potentially an attractive candidate to study as an organic intermediate layer in Schottky barrier diodes. For example, [108] reports the fabrication of PVA doped with Ni, Zn nanofiber film on a silicon substrate using an electrospinning technique as an intermediate layer for an MS diode.…”

Section: Future Directionsmentioning

confidence: 99%

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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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Section: Future Directionsmentioning

confidence: 92%

Section: Future Directionsmentioning

confidence: 99%

Section: Future Directionsmentioning

confidence: 99%

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