Hydrogen-Related Recovery Effect of AlGaN/GaN High-Electron-Mobility Transistors Irradiated by High-Fluence Protons

Chen, Ziwen; Yue, Shaozhong; Peng, Chao; Zhang, Zhangang; Liu, Chang; Wang, Lei; Huang, Yiming; Huang, Yun; He, Yuhui; Zhong, Xiangli; Lei, Zhifeng

doi:10.1109/tns.2021.3051972

Cited by 14 publications

(5 citation statements)

References 29 publications

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“…Hydrogen was diffused from SiN or the atmosphere to the SiN/GaN interface, and formed hydrogenated vacancies. The hydrogen from SiN and the hydrogen were able to recover the proton irradiation-generated defects [ 36 ]. Thus, the performance of the devices with the pre-treatment irradiated by the protons were recovered by the hydrogen passivation effects.…”

Section: Resultsmentioning

confidence: 99%

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

et al. 2021

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This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality.

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Section: Resultsmentioning

confidence: 99%

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

et al. 2021

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“…It combines with the traps at the border of the SiNx dielectric layer, the AlGaN barrier layer, and the GaN buffer layer; passivates the hanging bond and the interface state; and then reduces the traps inside the device. Frequency (Hz) Frequency (Hz) The defect density of the border trap is extracted according to the tunneling theoretical model [11,[28][29][30]. The power spectral density Svbf of flat band voltage noise and the drain current Ids have the following equation relationship:…”

Section: The Influence Of Hydrogen Effect On Border Traps In Gan Devicesmentioning

confidence: 99%

“…The Svbf was adjusted as the input spectral noise density to achieve a good fit to the data, and the transconductance gm and operating current Ids of the device were extracted from the measured data. q is the electron charge, k is Bol mann's constant, λ is the tunneling a enuation distance during carrier injection, which is generally 0.5 nm, Nit is the The defect density of the border trap is extracted according to the tunneling theoretical model [11,[28][29][30]. The power spectral density S vbf of flat band voltage noise and the drain current Ids have the following equation relationship:…”

Section: The Influence Of Hydrogen Effect On Border Traps In Gan Devicesmentioning

confidence: 99%

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Zhao,

He,

et al. 2024

Micromachines

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In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiNx gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the threshold voltage VTH of the original device was positively shifted from −16.98 V to −11.53 V, and the positive bias of threshold was 5.45 V. When the VDS was swept from 0 to 1 V with VGS of 0 V, the IDS was reduced by 25% from 9.45 A to 7.08 A. (2) Another group of original devices with identical electrical performance, after the same duration of hydrogen treatment at 100 °C, exhibited a reverse shift in threshold voltage with a negative threshold shift of −0.91 V. The output characteristics were enhanced, and the saturation leakage current was increased. (3) The C-V method and the low-frequency noise method were used to investigate the effect of hydrogen effect on the device interface trap and border trap, respectively. It was found that high-temperature hydrogen conditions can passivate the interface/border traps of SiNx/AlGaN, reducing the density of interface/border traps and mitigating the trap capture effect. However, in the room-temperature hydrogen experiment, the concentration of interface/border traps increased. The research findings in this paper provide valuable references for the design and application of depletion-mode AlGaN/GaN HEMT devices.

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“…In recent years, the proton irradiation damage effects on AlGaN/GaN HEMT have been studied [12][13][14][15]. For example, Zhen et al [16], found that MIS-HEMT with Al 2 O 3 /SiN x double insulator showed the lowest drain current degradation and the fastest response in the switching test after proton irradiation with 3 MeV proton irradiation, they explained as the relatively large displacement threshold energy of Al 2 O 3 and the better passivation effect of SiN x .…”

Section: Introductionmentioning

confidence: 99%

Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton

Lu,

Cao,

et al. 2024

Phys. Scr.

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In this paper, proton irradiations on Cascode GaN HEMT power device with an energy of 80 MeV and fluences of 2×1011 p/cm2 and 6×1011 p/cm2 have been carried out, where the threshold voltages drifted negatively by 20.55% and 28.17%, respectively. After two months of room temperature annealing, the threshold voltages recovered 0.22 V and 0.27 V, respectively. The ionizing deposition energy (IEL) was simulated by using Monte Carlo software and TCAD, it the results showed that the value of IEL in Si MOSFET is 5~6 orders higher than that in GaN HEMT, while the value of the non-ionizing energy loss (NIEL) is one order higher than that in GaN HEMT. It means that the proton irradiation on the Cascode depleted GaN HEMT is more prone to produce displacement damage. As a large number of electrons and holes pairs were existed on the incident path of Si MOSFET under the proton irradiation, the produced electron will be captured by the gate oxide traps at the SiO2/Si interface, and the holes be captured by the defects generated in displacement damage, resulting in the accumulation of oxide trapped charges. Then, the electrical performance of Si MOSFET degrades seriously, thereby affecting the performance of the entire device. The studies will be helpful for the radiation hardening of Cascode GaN HEMT.

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Hydrogen-Related Recovery Effect of AlGaN/GaN High-Electron-Mobility Transistors Irradiated by High-Fluence Protons

Cited by 14 publications

References 29 publications

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton

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