Hydrogen reactions with electron irradiation damage in silicon

Peaker, А. R.; Evans–Freeman, J.H.; Kan, P. Y. Y.; Rubaldo, L.; Hawkins, I. D.; Vernon–Parry, K.D.; Dobaczewski, L.

doi:10.1016/s0921-4526(99)00463-9

Cited by 32 publications

(17 citation statements)

References 13 publications

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“…More recent studies have finally agreed on the assignment of E3 as a VOH complex. 23,[52][53][54] In this study we provide additional evidence for this identification, based on the annealing kinetics for VO and E3.…”

Section: B Vo Centermentioning

confidence: 61%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

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Section: B Vo Centermentioning

confidence: 61%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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“…It is known, for instance, that the vacancy-oxygen (V O) center and the divacancy (V 2 ) center disappear at temperatures below 300 • C in the presence of hydrogen. 1 The V O center transforms into a V OH center, [2][3][4][5][6][7][8][9][10] while the annealing mechanism for the V 2 center is less documented, although there have been several suggestions that the hydrogen-mediated annealing may give rise to a divacancy-hydrogen (V 2 H) center. 2,9,11 Reported values for the migration energy of monatomic hydrogen in Si range from 0.48 eV (Ref.…”

Section: Introductionmentioning

confidence: 99%

Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

et al. 2012

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A reaction model explaining (i) the hydrogen-mediated transformation of the vacancy-oxygen (V O) center into a vacancy-oxygen-hydrogen center (V OH * ), with an energy level at 0.37 eV below the conduction-band edge (E c ), and (ii) the passivation of the divacancy center is presented. V OH * dissociates with a rate of 2 × 10 −5 s −1 at 195 • C, causing V O to recover after long duration (>10 4 min), while a similar evolution occurs at 300 • C on a time scale of the order of 10 min. The diffusivity of the monatomic hydrogen used in the model agrees closely with the established values for the diffusivity of protons. After the recovery of V O, further annealing at higher temperatures and/or longer durations transforms V O into the "ordinary" vacancy-oxygen-hydrogen center with an energy level at E c − 0.32 eV (V OH). V OH is subsequently transformed into V OH 2 . For temperatures above 250 • C, two additional hydrogen-related levels occur (∼ 0.17 and ∼0.58 eV below E c ) with a one-to-one ratio and a possible association with different charge states of a V 2 OH center is discussed.

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“…Lowering of three major peaks related to VO and V 2 centres is accompanied by appearance of two new levels P2 and P3 at E C -0.309 and E C -0.365 eV, respectively. The level P2, which was observed by many researchers in proton irradiated [1,8] or hydrogenated and irradiated silicon [3,6], is according to recent studies ascribed to vacancy-oxygen-hydrogen complex (VOH) arising from hydrogenation of VO centre by monoatomic hydrogen [6]. VOH exhibits rather high stability (~350 °C).…”

Section: Methodsmentioning

confidence: 93%

“…This effect can be connected with creation of new VOD defect contributing to the signal of the P1 peak. Note that the signal of partially hydrogenated A-centre (VO) is also composed by contributions of two defects: VO centre and an unknown vacancy-oxygen-hydrogen complex [6].…”

Section: Methodsmentioning

confidence: 99%

Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high‐energy helium irradiation

Komarnitskyy¹,

Hazdra²,

Buršı́ková³

2011

Phys. Status Solidi (c)

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Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high‐energy alphas was investigated in the low–doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm‐2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 °C and diodes were isochronally annealed at temperatures ranging from 100 to 400 ºC. Reactions of hydrogen and deuterium with radiation defects were monitored by deep‐level transient spectroscopy.Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha‐particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy‐related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC–0.309 eV and EC–0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Hydrogen reactions with electron irradiation damage in silicon

Cited by 32 publications

References 13 publications

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high‐energy helium irradiation

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